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AT93C46D-TH-T
Microchip Technology Inc
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$0.1910 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | TSSOP-8 | compliant | 3A991.A.2 | 8542.31.00.01 | Microchip | |||||
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AT93C46E-TH-B
Microchip Technology Inc
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$0.2441 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | TSSOP-8 | compliant | 3A991.A.2 | 8542.31.00.01 | Microchip | ||||||
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AT93C46DY6-YH-E
Microchip Technology Inc
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$0.2634 | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-N8 | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | NO LEAD | 500 µm | DUAL | 600 µm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | UDFN-8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||||||
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AT93C46DY6-YH-T
Microchip Technology Inc
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$0.2856 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-N8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | NO LEAD | 500 µm | DUAL | 600 µm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | UDFN-8 | compliant | 3A991.A.2 | 8542.31.00.01 | Microchip | |||||
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AT93C46DN-SH-B
Microchip Technology Inc
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$0.2974 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC-8 | compliant | 3A991.A.2 | 8542.31.00.01 | Microchip | |||||
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CAT24C128WI-GT3
onsemi
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$0.3323 | Yes | Active | 131.072 kbit | 8 | 16KX8 | 3.3 V | 1 MHz | EEPROM | 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more | 1 | 100 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3.3 V | I2C | 2 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | ONSEMI | compliant | EAR99 | 8542.32.00.51 | onsemi | SOIC 8, 150 mils | 8 | 751BD | |||||||
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AT93C46EN-SH-T
Microchip Technology Inc
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$0.3400 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC-8 | compliant | 3A991.A.2 | 8542.31.00.01 | Microchip | ||||||
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CAT24C128YI-GT3
onsemi
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$0.4508 | Yes | Active | 131.072 kbit | 8 | 16KX8 | 3.3 V | 1 MHz | EEPROM | 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more | 1 | 100 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3.3 V | I2C | 2 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | ONSEMI | compliant | EAR99 | 8542.32.00.51 | onsemi | TSSOP8, 4.4x3 | 8 | 948AL | |||||||
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AT93C46E-PU
Microchip Technology Inc
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$0.4719 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP-8 | compliant | 3A991.A.2 | 8542.31.00.01 | Microchip | |||||||||
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CAT24C128HU4IGT3
onsemi
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$0.5645 | Yes | Active | 131.072 kbit | 8 | 16KX8 | 3.3 V | 1 MHz | EEPROM | 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more | 1 | 100 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3.3 V | I2C | 2 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-N8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | NO LEAD | 500 µm | DUAL | 550 µm | 3 mm | 2 mm | ONSEMI | compliant | EAR99 | 8542.32.00.51 | onsemi | UDFN8, 2x3, 0.5P, Extended Pad | 8 | 517AZ |