Parametric results for: GOB1UV6432-10Q-S under DRAMs

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IS43R16320D-5BLI
Integrated Silicon Solution Inc
$1.0000 Yes Yes End Of Life 536.8709 Mbit 16 32MX16 2.6 V 700 ps 200 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 2,4,8 25 mA 430 µA 2.7 V 2.5 V CMOS INDUSTRIAL R-PBGA-B60 Not Qualified e1 85 °C -40 °C 60 PLASTIC/EPOXY TBGA BGA60,9X12,40/32 RECTANGULAR GRID ARRAY, THIN PROFILE YES TIN SILVER COPPER BALL 1 mm BOTTOM 1.2 mm 13 mm 8 mm INTEGRATED SILICON SOLUTION INC BGA TBGA, BGA60,9X12,40/32 60 compliant EAR99 8542.32.00.28 Integrated Silicon Solution Inc.
IS46LQ16256AL-062BLA1
Integrated Silicon Solution Inc
$1.0000 Yes Active 4.295 Gbit 16 256MX16 1.6 GHz MULTI BANK PAGE BURST LPDDR4X DRAM TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY COMMON 1 1 256000000 268.4355 M SYNCHRONOUS NO 1.17 V 1.06 V CMOS INDUSTRIAL R-PBGA-B200 95 °C -40 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC FBGA-200 compliant EAR99 8542.32.00.36 Integrated Silicon Solution Inc.
IS43R16320D-6BLI
Integrated Silicon Solution Inc
$1.0000 Yes Yes End Of Life 536.8709 Mbit 16 32MX16 2.5 V 700 ps 166 MHz 8192 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 32000000 33.5544 M SYNCHRONOUS 3-STATE YES 2,4,8 25 mA 370 µA 2.7 V 2.3 V CMOS INDUSTRIAL R-PBGA-B60 Not Qualified e1 85 °C -40 °C 60 PLASTIC/EPOXY TBGA BGA60,9X12,40/32 RECTANGULAR GRID ARRAY, THIN PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.2 mm 13 mm 8 mm INTEGRATED SILICON SOLUTION INC BGA TBGA, BGA60,9X12,40/32 60 compliant EAR99 8542.32.00.28 Integrated Silicon Solution Inc.
IS43R32800D-5BLI
Integrated Silicon Solution Inc
$1.0000 Yes Obsolete 268.4355 Mbit 32 8MX32 2.5 V 700 ps 200 MHz 4096 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 2,4,8 5 mA 480 µA 2.7 V 2.3 V CMOS INDUSTRIAL S-PBGA-B144 Not Qualified 85 °C -40 °C 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm INTEGRATED SILICON SOLUTION INC BGA LFBGA, BGA144,12X12,32 144 compliant EAR99 8542.32.00.24 Integrated Silicon Solution Inc.
IS46LQ16128AL-062BLA1-TR
Integrated Silicon Solution Inc
$1.0000 Active 2.1475 Gbit 16 128MX16 1.1 V 1.6 GHz 8192 MULTI BANK PAGE BURST LPDDR4X DRAM COMMON 16,32 1 1 128000000 134.2177 M SYNCHRONOUS 3-STATE YES 16,32 1.2 mA 305 µA 1.17 V 1.06 V CMOS R-PBGA-B200 95 °C -40 °C AEC-Q100 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC unknown
IS46LQ32256A-062BLA2-TR
Integrated Silicon Solution Inc
$1.0000 Yes Active 8.5899 Gbit 32 256MX32 1.1 V 1.6 GHz 8192 MULTI BANK PAGE BURST LPDDR4 DRAM COMMON 16,32 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 16,32 200 µA 530 µA 1.17 V 1.06 V CMOS R-PBGA-B200 105 °C -40 °C 260 AEC-Q100 30 200 PLASTIC/EPOXY TFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.1 mm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC compliant
IS42S32160D-7BLI
Integrated Silicon Solution Inc
$1.0000 Yes Obsolete 536.8709 Mbit 32 16MX32 3.3 V 5.4 ns 143 MHz 8192 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 4 mA 300 µA 3.6 V 3 V CMOS INDUSTRIAL R-PBGA-B90 Not Qualified 85 °C -40 °C 90 PLASTIC/EPOXY TFBGA BGA90,9X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm INTEGRATED SILICON SOLUTION INC DSBGA TFBGA, BGA90,9X15,32 90 compliant EAR99 8542.32.00.28 Integrated Silicon Solution Inc.
IS42SM16200D-6BLI
Integrated Silicon Solution Inc
$1.0000 Yes Active 33.5544 Mbit 16 2MX16 3.3 V 5.5 ns DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 2000000 2.0972 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS INDUSTRIAL S-PBGA-B54 e1 3 85 °C -40 °C 54 PLASTIC/EPOXY TFBGA SQUARE GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 8 mm 8 mm INTEGRATED SILICON SOLUTION INC TFBGA, compliant EAR99 8542.32.00.02 Integrated Silicon Solution Inc.
IS43LQ16256AL-062BLI-TR
Integrated Silicon Solution Inc
$1.0000 Active DDR DRAM INTEGRATED SILICON SOLUTION INC unknown
IS46LQ16256A-062BLA2
Integrated Silicon Solution Inc
$1.0000 Yes Active 4.295 Gbit 16 256MX16 1.6 GHz MULTI BANK PAGE BURST LPDDR4 DRAM TERM PITCH-MAX; ALSO AVAILABLE WITH 1.7V TO 1.95V SUPPLY COMMON 1 1 256000000 268.4355 M SYNCHRONOUS NO 1.17 V 1.06 V CMOS INDUSTRIAL R-PBGA-B200 105 °C -40 °C 200 PLASTIC/EPOXY VFBGA BGA200,12X22,32/25 RECTANGULAR GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 850 µm 14.5 mm 10 mm INTEGRATED SILICON SOLUTION INC FBGA-200 compliant EAR99 8542.32.00.36