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IS42SM32100D-6BLI
Integrated Silicon Solution Inc
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IS42RM16200D-6BLI
Integrated Silicon Solution Inc
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IS42RM32100D-75BLI
Integrated Silicon Solution Inc
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IS42S16800F-6TL
Integrated Silicon Solution Inc
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AS4C4M16SA-6BIN
Alliance Memory Inc
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IS42VM16200D-75BLI
Integrated Silicon Solution Inc
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IS42VM32100D-6BLI
Integrated Silicon Solution Inc
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AS4C4M16SA-6TAN
Alliance Memory Inc
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IS42RM32100D-6BLI
Integrated Silicon Solution Inc
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IS45S16100H-7TLA2
Integrated Silicon Solution Inc
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Rohs Code
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Part Life Cycle Code
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Memory Density
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Memory Width | Organization |
Supply Voltage-Nom (Vsup)
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Access Time-Max
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Clock Frequency-Max (fCLK) |
Refresh Cycles
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Access Mode
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Memory IC Type
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Additional Feature
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I/O Type
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Interleaved Burst Length
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Number of Functions | Number of Ports | Number of Words Code | Number of Words |
Operating Mode
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Output Characteristics
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Self Refresh
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Sequential Burst Length
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Standby Current-Max
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Supply Current-Max
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Supply Voltage-Max (Vsup)
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Supply Voltage-Min (Vsup)
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Technology |
Temperature Grade
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JESD-30 Code
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Qualification Status
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JESD-609 Code
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Screening Level
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Time@Peak Reflow Temperature-Max (s)
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Number of Terminals
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Package Body Material
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Package Code
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Package Equivalence Code
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Package Shape
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Package Style
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Surface Mount
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Terminal Finish
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Terminal Form
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Terminal Pitch
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Terminal Position
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Seated Height-Max
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Length
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Width
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Ihs Manufacturer
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Package Description
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Reach Compliance Code
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ECCN Code
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HTS Code
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Samacsys Manufacturer
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Part Package Code
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Pin Count
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Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 3.3 V | 5.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | ||||||||||||||||||
Yes | Active | 33.5544 Mbit | 16 | 2MX16 | 2.5 V | 5.5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3 V | 2.3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e1 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||||||
Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 2.5 V | 6 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | ||||||||||||||||||
Yes | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 120 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP54,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | TSOP2 | 54 | ||||
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | ALLIANCE MEMORY INC | TFBGA-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | |||||||||||||||||
Yes | Active | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 6 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e1 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||||||
Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||||||||
Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 30 mA | 75 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | e3 | 3 | 105 °C | -40 °C | AEC-Q100 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | ||||||
Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 2.5 V | 5.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | ||||||||||||||||||
Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 80 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | Not Qualified | 105 °C | -40 °C | AEC-Q100 | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. |
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IS42SM32100D-6BLI
Integrated Silicon Solution Inc
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$2.1870 | Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 3.3 V | 5.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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IS42RM16200D-6BLI
Integrated Silicon Solution Inc
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$2.2122 | Yes | Active | 33.5544 Mbit | 16 | 2MX16 | 2.5 V | 5.5 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 3 V | 2.3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e1 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||||||||
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IS42RM32100D-75BLI
Integrated Silicon Solution Inc
|
$2.2122 | Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 2.5 V | 6 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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IS42S16800F-6TL
Integrated Silicon Solution Inc
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$2.2338 | Yes | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 120 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP54,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | TSOP2 | 54 | |||||
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AS4C4M16SA-6BIN
Alliance Memory Inc
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$2.2469 | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 3.6 V | 3 V | CMOS | INDUSTRIAL | S-PBGA-B54 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | ALLIANCE MEMORY INC | TFBGA-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | ||||||||||||||||||
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IS42VM16200D-75BLI
Integrated Silicon Solution Inc
|
$2.2603 | Yes | Active | 33.5544 Mbit | 16 | 2MX16 | 1.8 V | 6 ns | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | S-PBGA-B54 | e1 | 3 | 85 °C | -40 °C | 54 | PLASTIC/EPOXY | TFBGA | SQUARE | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||||||||
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IS42VM32100D-6BLI
Integrated Silicon Solution Inc
|
$2.2603 | Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||||||||
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AS4C4M16SA-6TAN
Alliance Memory Inc
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$2.2741 | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 30 mA | 75 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G54 | e3 | 3 | 105 °C | -40 °C | AEC-Q100 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | ALLIANCE MEMORY INC | TSOP2-54 | compliant | EAR99 | 8542.32.00.02 | Alliance Memory | |||||||
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IS42RM32100D-6BLI
Integrated Silicon Solution Inc
|
$2.3083 | Yes | Active | 33.5544 Mbit | 32 | 1MX32 | 2.5 V | 5.5 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | YES | 2.7 V | 2.3 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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IS45S16100H-7TLA2
Integrated Silicon Solution Inc
|
$2.3535 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 80 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | Not Qualified | 105 °C | -40 °C | AEC-Q100 | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. |