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IS43LR16400C-6BLI-TR
Integrated Silicon Solution Inc
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$1.0403 | Yes | Yes | Active | 67.1089 Mbit | 16 | 4MX16 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B60 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 60 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.1 mm | 10 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||||
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MT41K256M8DA-107:K
Micron Technology Inc
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$1.1007 | Yes | Active | 2.1475 Gbit | 8 | 256MX8 | 1.35 V | 195 ps | 933 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 164 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 85 °C | 260 | 30 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 10.5 mm | 8 mm | MICRON TECHNOLOGY INC | TFBGA, BGA78,9X13,32 | not_compliant | EAR99 | 8542.32.00.36 | Micron | |||||||
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IS42S16100H-7BLI
Integrated Silicon Solution Inc
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$1.1228 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 70 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PBGA-B60 | Not Qualified | 85 °C | -40 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||
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IS42S16400J-6TL
Integrated Silicon Solution Inc
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$1.2067 | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 166 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | YES | 1,2,4,8,FP | 80 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP54,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | TSOP2 | 54 | ||||||||||
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IS42S16100H-7BL
Integrated Silicon Solution Inc
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$1.2379 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 60 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||
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IS42S16100H-7TLI
Integrated Silicon Solution Inc
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$1.2469 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 143 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 3.5 mA | 70 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G50 | Not Qualified | 85 °C | -40 °C | 50 | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 800 µm | DUAL | 1.2 mm | 20.95 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | |||||||||||
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IS42S16400J-7TL
Integrated Silicon Solution Inc
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$1.2616 | Yes | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 3.3 V | 5.4 ns | 143 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 4000000 | 4.1943 M | SYNCHRONOUS | 3-STATE | NO | YES | 1,2,4,8,FP | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e3 | 70 °C | 260 | 30 | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP54,.46,32 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | TSOP2 | 54 | ||||||
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IS42S16100H-6BL
Integrated Silicon Solution Inc
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$1.2826 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3.3 V | 5.5 ns | 166 MHz | 2048 | DUAL BANK PAGE BURST | SYNCHRONOUS DRAM | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 1000000 | 1.0486 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 70 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,7X15,25 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 650 µm | BOTTOM | 1.2 mm | 10.1 mm | 6.4 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,7X15,25 | compliant | EAR99 | 8542.32.00.02 | Integrated Silicon Solution Inc. | ||||||||||||
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MT47H64M16HR-3 IT:H
Micron Technology Inc
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$1.3162 | Yes | Yes | Obsolete | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 450 ps | 333 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 7 mA | 230 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | Not Qualified | e1 | 85 °C | -40 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | MICRON TECHNOLOGY INC | TFBGA, BGA84,9X15,32 | unknown | 3A991 | 8542.32.00.32 | Micron | ||||||
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IS43LR32200C-6BLI-TR
Integrated Silicon Solution Inc
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$1.3354 | Yes | Yes | Active | 67.1089 Mbit | 32 | 2MX32 | 1.8 V | 5.5 ns | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | 1 | 1 | 2000000 | 2.0972 M | SYNCHRONOUS | YES | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B90 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, | compliant | EAR99 | 8542.32.00.02 |