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1 - 10 of 65,633 results
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BB640E6327HTSA1
Infineon Technologies AG
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$0.0648 | Yes | Yes | Not Recommended | 69 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 19.5 | ABRUPT | Not Qualified | R-PDSO-G2 | e3 | 1 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOD | R-PDSO-G2 | 2 | SOD-323 | compliant | EAR99 | 8541.10.00.80 | 1997-02-01 | Infineon | |||||||||||||
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BB181,115
NXP Semiconductors
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$0.0678 | Yes | Obsolete | 12.5 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 36 % | 12 | VERY HIGH FREQUENCY | ABRUPT | Not Qualified | R-PDSO-F2 | e3 | 1 | 125 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | SOD | PLASTIC, SC-79, 2 PIN | 2 | SOD523 | compliant | EAR99 | 8541.10.00 | NXP | ||||||||
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BB844E6327HTSA1
Infineon Technologies AG
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$0.0691 | Yes | Active | 43.75 pF | SILICON | 18 V | VARIABLE CAPACITANCE DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | CAPACITANCE MATCHED TO 1.5% | 2.86 % | 3.2 | VERY HIGH FREQUENCY | ABRUPT | R-PDSO-G3 | e3 | 1 | 150 °C | -55 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | ROHS COMPLIANT, SOT23, 3 PIN | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||||||||
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1SV280(TPH3,F)
Toshiba America Electronic Components
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$0.0762 | Yes | Active | 4.25 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 15 V | 1 | 2 | ABRUPT | SMALL OUTLINE | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.80 | Toshiba | |||||||||||||||||||||||||||||
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1SV279(TPH3,F)
Toshiba America Electronic Components
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$0.1127 | Yes | Active | 15 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 15 V | 1 | 2 | ABRUPT | SMALL OUTLINE | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.80 | Toshiba | |||||||||||||||||||||||||||||
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BB535E7904HTSA1
Infineon Technologies AG
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$0.1161 | Yes | Not Recommended | 18.7 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | LOW INDUCTANCE | 6.67 % | 8.2 | ULTRA HIGH FREQUENCY | ABRUPT | R-PDSO-G2 | e3 | 1 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-G2 | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||||||
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1SV323,H3F
Toshiba America Electronic Components
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$0.1225 | Active | VARIABLE CAPACITANCE DIODE | NOT SPECIFIED | NOT SPECIFIED | TOSHIBA CORP | unknown | EAR99 | Toshiba | |||||||||||||||||||||||||||||||||||||
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BB639E7904HTSA1
Infineon Technologies AG
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$0.1227 | Yes | Not Recommended | 38.3 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | LOW INDUCTANCE | 5.26 % | 13.5 | VERY HIGH FREQUENCY | ABRUPT | R-PDSO-G2 | e3 | 1 | 150 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-G2 | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||||||
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1SV305,L3F(T
Toshiba America Electronic Components
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$0.1261 | Active | 18.3 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5.46 % | 2.8 | VERY HIGH FREQUENCY | ABRUPT | R-PDSO-F2 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | TOSHIBA CORP | R-PDSO-F2 | unknown | EAR99 | 8541.10.00.80 | Toshiba | ||||||||||||||||||
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1SV279,H3F(T
Toshiba America Electronic Components
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$0.1261 | Active | 15 pF | 3 nA | SILICON | 15 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 15 V | 1 | 6.67 % | 2 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 15 V | ABRUPT | R-PDSO-F2 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.80 | Toshiba |