Parametric results for: GMV-6800-1004G under Varactors

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BB640E6327HTSA1
Infineon Technologies AG
$0.0648 Yes Yes Not Recommended 69 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 1 19.5 ABRUPT Not Qualified R-PDSO-G2 e3 1 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SOD R-PDSO-G2 2 SOD-323 compliant EAR99 8541.10.00.80 1997-02-01 Infineon
BB181,115
NXP Semiconductors
$0.0678 Yes Obsolete 12.5 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 36 % 12 VERY HIGH FREQUENCY ABRUPT Not Qualified R-PDSO-F2 e3 1 125 °C -55 °C 260 30 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) FLAT DUAL NXP SEMICONDUCTORS SOD PLASTIC, SC-79, 2 PIN 2 SOD523 compliant EAR99 8541.10.00 NXP
BB844E6327HTSA1
Infineon Technologies AG
$0.0691 Yes Active 43.75 pF SILICON 18 V VARIABLE CAPACITANCE DIODE COMMON CATHODE, 2 ELEMENTS YES 2 CAPACITANCE MATCHED TO 1.5% 2.86 % 3.2 VERY HIGH FREQUENCY ABRUPT R-PDSO-G3 e3 1 150 °C -55 °C 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG ROHS COMPLIANT, SOT23, 3 PIN compliant EAR99 8541.10.00.80 Infineon
1SV280(TPH3,F)
Toshiba America Electronic Components
$0.0762 Yes Active 4.25 pF VARIABLE CAPACITANCE DIODE SINGLE YES 15 V 1 2 ABRUPT SMALL OUTLINE TOSHIBA CORP unknown EAR99 8541.10.00.80 Toshiba
1SV279(TPH3,F)
Toshiba America Electronic Components
$0.1127 Yes Active 15 pF VARIABLE CAPACITANCE DIODE SINGLE YES 15 V 1 2 ABRUPT SMALL OUTLINE TOSHIBA CORP unknown EAR99 8541.10.00.80 Toshiba
BB535E7904HTSA1
Infineon Technologies AG
$0.1161 Yes Not Recommended 18.7 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 1 LOW INDUCTANCE 6.67 % 8.2 ULTRA HIGH FREQUENCY ABRUPT R-PDSO-G2 e3 1 150 °C -55 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG R-PDSO-G2 compliant EAR99 8541.10.00.80 Infineon
1SV323,H3F
Toshiba America Electronic Components
$0.1225 Active VARIABLE CAPACITANCE DIODE NOT SPECIFIED NOT SPECIFIED TOSHIBA CORP unknown EAR99 Toshiba
BB639E7904HTSA1
Infineon Technologies AG
$0.1227 Yes Not Recommended 38.3 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 1 LOW INDUCTANCE 5.26 % 13.5 VERY HIGH FREQUENCY ABRUPT R-PDSO-G2 e3 1 150 °C -55 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG R-PDSO-G2 compliant EAR99 8541.10.00.80 Infineon
1SV305,L3F(T
Toshiba America Electronic Components
$0.1261 Active 18.3 pF SILICON VARIABLE CAPACITANCE DIODE SINGLE YES 1 5.46 % 2.8 VERY HIGH FREQUENCY ABRUPT R-PDSO-F2 125 °C NOT SPECIFIED NOT SPECIFIED 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP R-PDSO-F2 unknown EAR99 8541.10.00.80 Toshiba
1SV279,H3F(T
Toshiba America Electronic Components
$0.1261 Active 15 pF 3 nA SILICON 15 V VARIABLE CAPACITANCE DIODE SINGLE YES 15 V 1 6.67 % 2 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 15 V ABRUPT R-PDSO-F2 125 °C NOT SPECIFIED NOT SPECIFIED 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP unknown EAR99 8541.10.00.80 Toshiba