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31 - 40 of 65,633 results
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BB914E6327HTSA1
Infineon Technologies AG
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$0.2683 | Yes | Yes | Active | 43.75 pF | SILICON | 18 V | VARIABLE CAPACITANCE DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | 1.5% MATCHED SETS AVAILABLE | 2.86 % | 2.28 | ABRUPT | Not Qualified | R-PDSO-G3 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-23 | R-PDSO-G3 | 3 | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||||||
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BBY5502VH6327XTSA1
Infineon Technologies AG
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$0.2689 | Yes | Active | 18.6 pF | SILICON | 16 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5.66 % | 2 | HYPERABRUPT | R-PDSO-F2 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | SC-79, 2 PIN | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||||||
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BB172X
NXP Semiconductors
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$0.2752 | Yes | Not Recommended | 38.5 pF | 10 nA | SILICON | 32 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 32 V | 1 | 10 % | 13.5 | VERY HIGH FREQUENCY | 30 V | ABRUPT | R-PDSO-G2 | IEC-60134 | 1 | 125 °C | -55 °C | 260 | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | NXP SEMICONDUCTORS | SOD | SOD-323, SC-76, 2 PIN | 2 | compliant | EAR99 | 8541.10.00 | NXP | SOD323 | ||||||||
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BBY5702VH6327XTSA1
Infineon Technologies AG
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$0.2762 | Yes | Active | VARIABLE CAPACITANCE DIODE | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||||||||
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BBY5302VH6327XTSA1
Infineon Technologies AG
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$0.2778 | Yes | Active | 5.3 pF | SILICON | 6 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 9.43 % | 1.8 | ULTRA HIGH FREQUENCY | HYPERABRUPT | R-PDSO-F2 | e3 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-F2 | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||||||||
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BB174X
NXP Semiconductors
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$0.3425 | Yes | Not Recommended | 19.74 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | 8.45 | ABRUPT | e3 | 1 | 260 | 30 | Tin (Sn) | NXP SEMICONDUCTORS | SOD | 2 | compliant | EAR99 | 8541.10.00 | NXP | SOD523 | |||||||||||||||||||||||
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BB439E6327HTSA1
Infineon Technologies AG
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$0.3460 | Yes | Yes | Not Recommended | 43 pF | SILICON | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 5 | VERY HIGH FREQUENCY | ABRUPT | Not Qualified | R-PDSO-G2 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOD | R-PDSO-G2 | 2 | compliant | EAR99 | 8541.10.00.80 | Infineon | SOD323 | 1997-02-01 | |||||||||||
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BBY58-02W
Infineon Technologies AG
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$0.3595 | Yes | Yes | Active | 18.3 pF | SILICON | 10 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 10 V | 1 | LOW INDUCTANCE | 4.89 % | 1.15 | HYPERABRUPT | Not Qualified | R-PDSO-F2 | 1 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-F2 | 2 | compliant | EAR99 | 8541.10.00.80 | ||||||||||||||||
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BB175X
NXP Semiconductors
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$0.3770 | Yes | Not Recommended | 57 pF | 32 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 32 V | 1 | 20.6 | ABRUPT | e3 | 1 | 260 | 30 | Tin (Sn) | NXP SEMICONDUCTORS | SOD | 2 | compliant | EAR99 | 8541.10.00 | NXP | SOD523 | ||||||||||||||||||||||
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1SV285(TPH3,F)
Toshiba America Electronic Components
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$0.4540 | Yes | Active | 4.5 pF | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 10 V | 1 | 2 | ABRUPT | SMALL OUTLINE | TOSHIBA CORP | unknown | EAR99 | 8541.10.00.80 | Toshiba |