Parametric results for: sq-12 under Varactors

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AH229-84
Teledyne e2v
Check for Price Obsolete 6.82 pF GALLIUM ARSENIDE 15 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 20 % VERY HIGH FREQUENCY TO KA BAND 1500 HYPERABRUPT Not Qualified O-XEMW-F2 2 UNSPECIFIED ROUND MICROWAVE FLAT END ATMEL GRENOBLE O-XEMW-F2 unknown EAR99 8541.10.00.80
PG210B
Cobham PLC
Check for Price Obsolete 10 pF 500 nA 400 mW SILICON 70 V VARIABLE CAPACITANCE DIODE SINGLE NO 70 V 1 ULTRA HIGH Q 5 % 4.05 100 65 V ABRUPT Not Qualified O-LALF-W2 e0 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC O-LALF-W2 unknown EAR99 8541.10.00.80 DO-7 2
VA117B
Cobham PLC
Check for Price No Obsolete 47 pF 500 nA 400 mW SILICON 110 V VARIABLE CAPACITANCE DIODE SINGLE NO 110 V 1 5 % 5.2 100 100 V ABRUPT Not Qualified O-LALF-W2 e0 150 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM Tin/Lead (Sn/Pb) WIRE AXIAL KNOX SEMICONDUCTORS INC O-LALF-W2 unknown EAR99 8541.10.00.80 DO-7 2
SMV1408AH
Aeroflex Inc
Check for Price Yes Transferred 47 pF 100 nA 400 mW SILICON 12 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 3% MATCHED SETS ARE AVAILABLE 10 % 10 200 10 V HYPERABRUPT Not Qualified R-PDSO-G3 175 °C NOT SPECIFIED NOT SPECIFIED 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL KNOX SEMICONDUCTORS INC R-PDSO-G3 unknown EAR99 8541.10.00.80 3
TX-GC1500-88
Lockheed Martin Microwave
Check for Price Obsolete 0.8 pF 20 nA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 HIGH RELIABILITY 10 % 3.3 X BAND 3900 25 V ABRUPT Not Qualified O-MEMW-N2 150 °C -55 °C CATHODE 2 METAL ROUND MICROWAVE NO LEAD END LOCKHEED MARTIN MICROWAVE O-MEMW-N2 unknown EAR99 8541.10.00.80
ML4313-103
TE Connectivity
Check for Price Transferred SILICON 25 V VARIABLE CAPACITANCE DIODE NO ABRUPT Not Qualified O-CUPM-N1 1 CERAMIC, METAL-SEALED COFIRED ROUND POST/STUD MOUNT NO LEAD UPPER TYCO ELECTRONICS M/A-COM O-CUPM-N1 unknown EAR99 8541.10.00.80
LP1032F
Msi Electronics Inc
Check for Price Obsolete 20 pF 0.02 pA 5 W SILICON 25 V VARIABLE CAPACITANCE DIODE SINGLE YES 25 V 1 LOW INDUCTANCE 4.6 ULTRA HIGH FREQUENCY 500 20 V ABRUPT Not Qualified X-CXMW-F2 175 °C 2 CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE FLAT UNSPECIFIED MSI ELECTRONICS INC X-CXMW-F2 unknown EAR99 8541.10.00.80
HA1915CCHIP
Spectrum Control
Check for Price Active 2.7 pF 0.02 pA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 HIGH Q 2 % 3.1 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 1000 25 V HYPERABRUPT Not Qualified X-XUUC-N 175 °C UNSPECIFIED UNSPECIFIED UNCASED CHIP NO LEAD UPPER API TECHNOLOGIES CORP X-XUUC-N compliant EAR99 8541.10.00.40
1T364T8
Sony Semiconductor
Check for Price Obsolete 31.25 pF 10 nA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 11.5 28 V ABRUPT Not Qualified R-PDSO-G2 75 °C -20 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL SONY CORP R-PDSO-G2 unknown EAR99 8541.10.00.80 2
GC1704-85
Lockheed Martin Microwave
Check for Price Obsolete 1.8 pF 20 nA SILICON 60 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 10 % 5.5 S BAND 1700 55 V ABRUPT Not Qualified O-MEMW-N2 150 °C -55 °C CATHODE 2 METAL ROUND MICROWAVE NO LEAD END LOCKHEED MARTIN MICROWAVE O-MEMW-N2 unknown EAR99 8541.10.00.80