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71 - 80 of 65,633 results
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AH229-84
Teledyne e2v
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Check for Price | Obsolete | 6.82 pF | GALLIUM ARSENIDE | 15 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 20 % | VERY HIGH FREQUENCY TO KA BAND | 1500 | HYPERABRUPT | Not Qualified | O-XEMW-F2 | 2 | UNSPECIFIED | ROUND | MICROWAVE | FLAT | END | ATMEL GRENOBLE | O-XEMW-F2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||||||
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PG210B
Cobham PLC
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Check for Price | Obsolete | 10 pF | 500 nA | 400 mW | SILICON | 70 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 70 V | 1 | ULTRA HIGH Q | 5 % | 4.05 | 100 | 65 V | ABRUPT | Not Qualified | O-LALF-W2 | e0 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | DO-7 | 2 | ||||||
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VA117B
Cobham PLC
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Check for Price | No | Obsolete | 47 pF | 500 nA | 400 mW | SILICON | 110 V | VARIABLE CAPACITANCE DIODE | SINGLE | NO | 110 V | 1 | 5 % | 5.2 | 100 | 100 V | ABRUPT | Not Qualified | O-LALF-W2 | e0 | 150 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | KNOX SEMICONDUCTORS INC | O-LALF-W2 | unknown | EAR99 | 8541.10.00.80 | DO-7 | 2 | ||||||
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SMV1408AH
Aeroflex Inc
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Check for Price | Yes | Transferred | 47 pF | 100 nA | 400 mW | SILICON | 12 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 3% MATCHED SETS ARE AVAILABLE | 10 % | 10 | 200 | 10 V | HYPERABRUPT | Not Qualified | R-PDSO-G3 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | KNOX SEMICONDUCTORS INC | R-PDSO-G3 | unknown | EAR99 | 8541.10.00.80 | 3 | |||||||||
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TX-GC1500-88
Lockheed Martin Microwave
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Check for Price | Obsolete | 0.8 pF | 20 nA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | HIGH RELIABILITY | 10 % | 3.3 | X BAND | 3900 | 25 V | ABRUPT | Not Qualified | O-MEMW-N2 | 150 °C | -55 °C | CATHODE | 2 | METAL | ROUND | MICROWAVE | NO LEAD | END | LOCKHEED MARTIN MICROWAVE | O-MEMW-N2 | unknown | EAR99 | 8541.10.00.80 | |||||||||||
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ML4313-103
TE Connectivity
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Check for Price | Transferred | SILICON | 25 V | VARIABLE CAPACITANCE DIODE | NO | ABRUPT | Not Qualified | O-CUPM-N1 | 1 | CERAMIC, METAL-SEALED COFIRED | ROUND | POST/STUD MOUNT | NO LEAD | UPPER | TYCO ELECTRONICS M/A-COM | O-CUPM-N1 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||||||||||||||
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LP1032F
Msi Electronics Inc
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Check for Price | Obsolete | 20 pF | 0.02 pA | 5 W | SILICON | 25 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 25 V | 1 | LOW INDUCTANCE | 4.6 | ULTRA HIGH FREQUENCY | 500 | 20 V | ABRUPT | Not Qualified | X-CXMW-F2 | 175 °C | 2 | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | MICROWAVE | FLAT | UNSPECIFIED | MSI ELECTRONICS INC | X-CXMW-F2 | unknown | EAR99 | 8541.10.00.80 | ||||||||||||
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HA1915CCHIP
Spectrum Control
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Check for Price | Active | 2.7 pF | 0.02 pA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 30 V | 1 | HIGH Q | 2 % | 3.1 | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 1000 | 25 V | HYPERABRUPT | Not Qualified | X-XUUC-N | 175 °C | UNSPECIFIED | UNSPECIFIED | UNCASED CHIP | NO LEAD | UPPER | API TECHNOLOGIES CORP | X-XUUC-N | compliant | EAR99 | 8541.10.00.40 | |||||||||||||
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1T364T8
Sony Semiconductor
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Check for Price | Obsolete | 31.25 pF | 10 nA | SILICON | 30 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 11.5 | 28 V | ABRUPT | Not Qualified | R-PDSO-G2 | 75 °C | -20 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SONY CORP | R-PDSO-G2 | unknown | EAR99 | 8541.10.00.80 | 2 | |||||||||||||||
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GC1704-85
Lockheed Martin Microwave
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Check for Price | Obsolete | 1.8 pF | 20 nA | SILICON | 60 V | VARIABLE CAPACITANCE DIODE | SINGLE | YES | 1 | 10 % | 5.5 | S BAND | 1700 | 55 V | ABRUPT | Not Qualified | O-MEMW-N2 | 150 °C | -55 °C | CATHODE | 2 | METAL | ROUND | MICROWAVE | NO LEAD | END | LOCKHEED MARTIN MICROWAVE | O-MEMW-N2 | unknown | EAR99 | 8541.10.00.80 |