Parametric results for: SMB8J22CAHE3_B/H under Transient Suppressors

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ESD132B1W0201E6327XTSA1
Infineon Technologies AG
$0.0258 Yes Active 8 V 100 nA 8.5 V SILICON 6.1 V TRANS VOLTAGE SUPPRESSOR DIODE BIDIRECTIONAL SINGLE YES 5.5 V 1 AVALANCHE 63 W 5.5 V R-XBCC-N2 IEC-61000-4-2,4-4,4-5 1 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED 2 UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM INFINEON TECHNOLOGIES AG compliant EAR99 8541.10.00.50 Infineon
SMAJ15A-13-F
Diodes Incorporated
$0.0258 No Yes Active 24.4 V 1 W 17.6 V SILICON 16.7 V TRANS VOLTAGE SUPPRESSOR DIODE UNIDIRECTIONAL SINGLE YES 15 V 1 AVALANCHE EXCELLENT CLAMPING CAPABILITY 18.5 V 400 W Not Qualified R-PDSO-C2 e3 1 150 °C -55 °C 260 30 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN C BEND DUAL DIODES INC not_compliant EAR99 8541.10.00.50 Diodes Incorporated 2 SMA
ESDZV5-1BF4
STMicroelectronics
$0.0260 Yes Active 100 nA SILICON TRANS VOLTAGE SUPPRESSOR DIODE BIDIRECTIONAL SINGLE YES 5.5 V 1 AVALANCHE 70 W 5.5 V R-PBCC-N2 IEC-61000-4-2 150 °C -55 °C NOT SPECIFIED NOT SPECIFIED 2 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER NO LEAD BOTTOM STMICROELECTRONICS compliant EAR99 8541.10.00.50 STMicroelectronics
ESD9L1P8
Diotec Semiconductor AG
$0.0260 Yes Active 7.5 V 50 nA SILICON 2.2 V TRANS VOLTAGE SUPPRESSOR DIODE UNIDIRECTIONAL SINGLE YES 1.8 V 1 AVALANCHE 80 W 1.8 V R-PBCC-N2 IEC-61000-4-2 125 °C -50 °C NOT SPECIFIED NOT SPECIFIED 2 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER NO LEAD BOTTOM DIOTEC SEMICONDUCTOR AG compliant Diotec
P4SMA30CA-E3/61
Vishay Intertechnologies
$0.0266 Yes Active 41.4 V 3.3 W 30 V SILICON 28.5 V TRANS VOLTAGE SUPPRESSOR DIODE BIDIRECTIONAL SINGLE YES 25.6 V 1 AVALANCHE EXCELLENT CLAMPING CAPABILITY 31.5 V 300 W Not Qualified R-PDSO-C2 e3 DO-214AC 1 150 °C -65 °C 260 30 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) C BEND DUAL VISHAY INTERTECHNOLOGY INC not_compliant Vishay
NUP1301ML3T1G
onsemi
$0.0266 Yes Active 715 mA 715 mV SILICON 70 V TRANS VOLTAGE SUPPRESSOR DIODE UNIDIRECTIONAL SERIES CONNECTED, CENTER TAP, 2 ELEMENTS YES 70 V 2 AVALANCHE 500 mA Not Qualified R-PDSO-G3 e3 TO-236AB 1 150 °C -65 °C 260 40 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI compliant EAR99 8541.10.00.50 onsemi 3 318 SOT-23 (TO-236) 3 LEAD CASE 318-08, 3 PIN
ESD134B1W0201E6327XTSA1
Infineon Technologies AG
$0.0268 Yes Active 7.5 V 20 nA 9.5 V SILICON 8 V TRANS VOLTAGE SUPPRESSOR DIODE BIDIRECTIONAL SINGLE YES 2.1 V 1 AVALANCHE 56 W 2.1 V R-XBCC-N2 IEC-61000-4-2,4-4,4-5 1 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED 2 UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM INFINEON TECHNOLOGIES AG compliant
SMBJ48A-13-F
SPC Multicomp
$0.0270 Active SILICON 53.3 V TRANS VOLTAGE SUPPRESSOR DIODE UNIDIRECTIONAL SINGLE YES 48 V 1 AVALANCHE EXCELLENT CLAMPING CAPABILITY, PRSM-MIN 58.9 V 600 W R-PDSO-C2 DO-214AA 150 °C -55 °C 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE C BEND DUAL SPC TECHNOLOGY/ MULTICOMP unknown EAR99 8541.10.00.50 R-PDSO-C2
P6KE39CA+
SPC Multicomp
$0.0278 Active 5 W SILICON 37.1 V TRANS VOLTAGE SUPPRESSOR DIODE BIDIRECTIONAL SINGLE NO 33.3 V 1 AVALANCHE EXCELLENT CLAMPING CAPABILITY, PRSM-MIN 41 V 600 W O-PALF-W2 DO-15 150 °C -55 °C ISOLATED 2 PLASTIC/EPOXY ROUND LONG FORM WIRE AXIAL SPC TECHNOLOGY/ MULTICOMP unknown EAR99 8541.10.00.50 O-PALF-W2
ESD5581N2T5G
onsemi
$0.0280 Yes Active 12 V 100 nA 250 mW 6.2 V SILICON 5.2 V TRANS VOLTAGE SUPPRESSOR DIODE BIDIRECTIONAL SINGLE YES 5 V 1 AVALANCHE EXCELLENT CLAMPING CAPABILITY 7.5 V 5 V R-PBCC-N2 e4 IEC-61000-4-2 1 150 °C -55 °C 260 30 2 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER NICKEL PALLADIUM GOLD NO LEAD BOTTOM ONSEMI compliant EAR99 8541.10.00.50 onsemi 714AB X2DFN-2 X2DFN-2