Parametric results for: 1N5822 under Rectifier Diodes
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JANTXV1N5822.TR
Semtech Corporation
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Check for Price | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | ||||||||||||||||
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JANS1N5822US.TR
Semtech Corporation
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Check for Price | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | HIGH RELIABILITY | GENERAL PURPOSE | 80 A | 1 | 40 V | O-LELF-R2 | MIL-19500 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | SEMTECH CORP | unknown | EAR99 | MELF-2 | |||||||||||||||
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1N5822-T
Diodes Incorporated
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Check for Price | No | Yes | Obsolete | 3 A | 525 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | FREE WHEELING DIODE, LOW POWER LOSS | EFFICIENCY | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 1 | 125 °C | 260 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | DIODES INC | not_compliant | EAR99 | ROHS COMPLIANT, PLASTIC PACKAGE-2 | DO-201AD | 2 | 8541.10.00.80 | ||||||||
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JANHC1N5822
Compensated Devices Inc
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Check for Price | Transferred | 3 A | SILICON | RECTIFIER DIODE | SINGLE | YES | 1 | SCHOTTKY | GENERAL PURPOSE | 1 | Not Qualified | S-XUUC-N1 | MIL-19500/620 | 1 | UNSPECIFIED | SQUARE | UNCASED CHIP | NO LEAD | UPPER | COMPENSATED DEVICES INC | unknown | EAR99 | S-XUUC-N1 | 8541.10.00.40 | ||||||||||||||||||||||
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1N5822USE3
Microsemi Corporation
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Check for Price | Yes | Transferred | 3 A | 400 mV | SILICON | RECTIFIER DIODE | SINGLE | YES | 40 V | 1 | SCHOTTKY | METALLURGICALLY BONDED | GENERAL PURPOSE | 80 A | 1 | O-LELF-R2 | 125 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSEMI CORP | compliant | EAR99 | HERMETIC SEALED, D5B, 2 PIN | 8541.10.00.80 | |||||||||||||||||
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1N5822
Littelfuse Inc
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Check for Price | No | Obsolete | 3 A | 950 mV | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | 80 A | 1 | e0 | 125 °C | Tin/Lead (Sn/Pb) | SEMITRON | unknown | EAR99 | ||||||||||||||||||||||||||||
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JANTXV1N5822
Compensated Devices Inc
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Check for Price | Transferred | 3 A | 700 mV | 100 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | METALLURGICALLY BONDED | GENERAL PURPOSE | 1 | Not Qualified | O-LALF-W2 | MIL-19500/620 | 125 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | COMPENSATED DEVICES INC | unknown | ||||||||||||||||||
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1N5822HA0G
Taiwan Semiconductor
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Check for Price | Yes | Active | 3 A | 525 mV | 500 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | GENERAL PURPOSE | 70 A | 1 | O-PALF-W2 | e3 | AEC-Q101 | DO-201AD | 125 °C | -55 °C | 260 | 10 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | TIN | WIRE | AXIAL | TAIWAN SEMICONDUCTOR CO LTD | compliant | EAR99 | 8541.10.00.80 | Taiwan Semiconductor | ||||||||||
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1N5822-BP
Micro Commercial Components
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Check for Price | Yes | Yes | Active | 3 A | 525 mV | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | LOW NOISE | GENERAL PURPOSE | 80 A | 1 | Not Qualified | O-PALF-W2 | e3 | DO-201AD | 1 | 125 °C | 260 | 10 | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | Matte Tin (Sn) | WIRE | AXIAL | MICRO COMMERCIAL COMPONENTS CORP | not_compliant | EAR99 | O-PALF-W2 | DO-201AD | 2 | 8541.10.00.80 | |||||||
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1N5822_B0_00001
PanJit Semiconductor
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Check for Price | Yes | Active | 3 A | 950 mV | 200 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 40 V | 1 | SCHOTTKY | FREE WHEELING DIODE | GENERAL PURPOSE | 80 A | 1 | O-PALF-W2 | DO-201AD | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | PLASTIC/EPOXY | ROUND | LONG FORM | WIRE | AXIAL | PAN JIT INTERNATIONAL INC | compliant | EAR99 | 8541.10.00.80 |