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BAR6302LE6327XTMA1
Infineon Technologies AG
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$0.1441 | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-XBCC-N2 | e4 | 1 | 150 °C | 2 | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Gold (Au) | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | R-XBCC-N2 | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||||||||
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RN739FT106
ROHM Semiconductor
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$0.1468 | Yes | Yes | Active | 0.4 pF | 200 mW | 7 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR | 10 mA | 100 MHz | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 50 V | Not Qualified | R-PDSO-G3 | e1 | 125 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Silver/Copper (Sn/Ag/Cu) | GULL WING | DUAL | ROHM CO LTD | compliant | EAR99 | 8541.10.00.80 | ROHM Semiconductor | ||||||||||||
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BAP64-06,215
NXP Semiconductors
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$0.1469 | Yes | Obsolete | 0.35 pF | 0.52 pF | 250 mW | 1.35 Ω | SILICON | 175 V | PIN DIODE | COMMON ANODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-G3 | e3 | TO-236AB | 1 | 150 °C | -65 °C | 260 | 30 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | NXP SEMICONDUCTORS | PLASTIC, SMD, SST3, 3 PIN | compliant | EAR99 | 8541.10.00 | NXP | TO-236 | 3 | SOT23 | ||||
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BAR8802VH6327XTSA1
Infineon Technologies AG
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$0.1505 | Yes | Yes | Not Recommended | 0.4 pF | 250 mW | 2.5 Ω | SILICON | 80 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | ULTRA HIGH FREQUENCY | 500 ns | R-PDSO-F2 | e3 | 1 | 125 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-F2 | compliant | EAR99 | 8541.10.00.80 | Infineon | SC-79 | 2 | ||||||||||||
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BAR64-05W-E3-18
Vishay Intertechnologies
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$0.1509 | Yes | Active | 0.5 pF | 0.5 pF | SILICON | 100 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | HIGH FREQUENCY TO S BAND | 1.4 µs | R-PDSO-G3 | 125 °C | -55 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | VISHAY INTERTECHNOLOGY INC | SOT-323, 3 PIN | unknown | Vishay | ||||||||||||||||||||
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BAP70-02,115
NXP Semiconductors
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$0.1525 | Yes | Obsolete | 0.25 pF | 0.57 pF | 415 mW | 1.9 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR | 500 µA | 100 MHz | 1.25 µs | Not Qualified | R-PDSO-F2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | ULTRA SMALL, PLASTIC, SC-79, 2 PIN | compliant | EAR99 | 8541.10.00 | NXP | SOD | 2 | SOD523 | ||||||
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BAR6406E6327HTSA1
Infineon Technologies AG
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$0.1575 | Yes | Not Recommended | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON ANODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||||||||||||||||||||||
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BAP64-02,115
NXP Semiconductors
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$0.1670 | Yes | Not Recommended | 0.35 pF | 0.48 pF | 715 mW | 1.35 Ω | SILICON | 175 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH VOLTAGE | ATTENUATOR; SWITCHING | 500 µA | 100 MHz | S BAND | 1.55 µs | Not Qualified | R-PDSO-F2 | e3 | 1 | 150 °C | -65 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | NXP SEMICONDUCTORS | ULTRA SMALL, PLASTIC, SC-79, 2 PIN | compliant | EAR99 | 8541.10.00 | NXP | SOD | 2 | SOD523 | |||||
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BAR6304WH6327XTSA1
Infineon Technologies AG
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$0.1674 | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G3 | e3 | 1 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | R-PDSO-G3 | compliant | EAR99 | 8541.10.00.80 | Infineon | ||||||||||||||||
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NSDP301MX3T5G
onsemi
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$0.1757 | Yes | Active | 0.33 pF | SILICON | 80 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | HIGH FREQUENCY | R-PBCC-N2 | e4 | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | NICKEL PALLADIUM GOLD | NO LEAD | BOTTOM | ONSEMI | X3DFN-2 | compliant | onsemi | X3DFN-2 | 152AF |