Datasheets
ZXMN6A25N8TA by:
Diodes Incorporated
Diodes Incorporated
Zetex / Diodes Inc
Not Found

Power Field-Effect Transistor, 4.3A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for ZXMN6A25N8TA by Diodes Incorporated

Results Overview of ZXMN6A25N8TA by Diodes Incorporated

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ZXMN6A25N8TA Information

ZXMN6A25N8TA by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for ZXMN6A25N8TA

Part # Distributor Description Stock Price Buy
DISTI # ZXMN6A25N8TADI-ND
DigiKey MOSFET N-CH 60V 4.3A 8SO Min Qty: 500 Lead time: 8 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 500 $0.5387
  • 1,000 $0.4920
  • 1,500 $0.4682
  • 2,500 $0.4414
  • 3,500 $0.4256
  • 5,000 $0.4102
  • 12,500 $0.4069
$0.4069 / $0.5387 Buy Now
DISTI # ZXMN6A25N8TA
Avnet Americas Trans MOSFET N-CH 60V 5.7A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN6A25N8TA) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 8 Weeks, 0 Days Container: Reel 8000 Factory Stock
  • 500 $0.3871
  • 1,000 $0.3851
  • 2,000 $0.3735
  • 3,000 $0.3715
  • 4,000 $0.3696
$0.3696 / $0.3871 Buy Now
DISTI # 621-ZXMN6A25N8TA
Mouser Electronics MOSFETs N-CHANNEL 60V RoHS: Compliant 2
  • 1 $1.2700
  • 10 $0.8870
  • 100 $0.6910
  • 500 $0.5380
  • 1,000 $0.4570
  • 2,500 $0.4250
  • 5,000 $0.4100
$0.4100 / $1.2700 Buy Now
Future Electronics N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 500 $0.4050
  • 1,000 $0.4000
  • 1,500 $0.3950
  • 2,000 $0.3900
  • 2,500 $0.3850
$0.3850 / $0.4050 Buy Now
Future Electronics N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 500 $0.4050
  • 1,000 $0.4000
  • 1,500 $0.3950
  • 2,000 $0.3900
  • 2,500 $0.3850
$0.3850 / $0.4050 Buy Now
DISTI # ZXMN6A25N8TA
Avnet Silica Trans MOSFET NCH 60V 57A 8Pin SOIC TR (Alt: ZXMN6A25N8TA) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Silica - 500
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 500 500
  • 500 $0.6611
$0.6611 Buy Now

Part Details for ZXMN6A25N8TA

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ZXMN6A25N8TA Part Data Attributes

ZXMN6A25N8TA Diodes Incorporated
Buy Now Datasheet
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ZXMN6A25N8TA Diodes Incorporated Power Field-Effect Transistor, 4.3A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Part Package Code SOT
Package Description SOP-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Diodes Incorporated
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 4.3 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 4.14 W
Pulsed Drain Current-Max (IDM) 25.7 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

ZXMN6A25N8TA Related Parts

ZXMN6A25N8TA Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the ZXMN6A25N8TA is a standard SOT223 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.

  • To ensure proper thermal management, it is recommended to use a thermal pad or heat sink with a thermal resistance of less than 10°C/W, and to keep the ambient temperature below 125°C.

  • The maximum allowed voltage on the gate pin is ±20V, but it is recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.

  • Yes, the ZXMN6A25N8TA is suitable for high-frequency switching applications up to 100kHz, but it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize electromagnetic interference (EMI).

  • To protect the ZXMN6A25N8TA from ESD, it is recommended to handle the device with anti-static wrist straps, mats, or bags, and to use ESD-sensitive devices handling procedures.