Datasheets
ZXMN3A06DN8TA by:

Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for ZXMN3A06DN8TA by Diodes Incorporated

Overview of ZXMN3A06DN8TA by Diodes Incorporated

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Price & Stock for ZXMN3A06DN8TA

Part # Distributor Description Stock Price Buy
DISTI # ZXMN3A06DN8CT-ND
DigiKey MOSFET 2N-CH 30V 4.9A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Tape & Reel (TR) 410
In Stock
  • 1 $1.7000
  • 10 $1.0790
  • 100 $0.7235
  • 500 $0.5709
  • 1,000 $0.5218
  • 1,500 $0.4967
  • 2,500 $0.4685
  • 3,500 $0.4518
  • 5,000 $0.4356
  • 12,500 $0.4331
$0.4331 / $1.7000 Buy Now
DISTI # ZXMN3A06DN8TA
Avnet Americas Transistor MOSFET Array Dual N-CH 30V 6.2A 8-Pin SOIC T/R - Tape and Reel (Alt: ZXMN3A06DN8TA) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 500 $0.3728
$0.3728 Buy Now
DISTI # 522-ZXMN3A06DN8TA
Mouser Electronics MOSFETs Dl 30V N-Chnl UMOS RoHS: Compliant 663
  • 1 $0.8900
  • 10 $0.7470
  • 100 $0.6290
  • 500 $0.6040
  • 1,000 $0.5180
  • 2,500 $0.4950
$0.4950 / $0.8900 Buy Now
DISTI # V79:2366_23280679
Arrow Electronics Trans MOSFET N-CH 30V 4.9A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 204 Package Multiple: 1 Date Code: 1848 Americas - 204
  • 204 $0.3750
$0.3750 Buy Now
Future Electronics ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks Container: Reel 500
Reel
  • 500 $0.4750
  • 1,500 $0.4600
  • 2,000 $0.4550
  • 5,000 $0.4400
  • 7,500 $0.4300
$0.4300 / $0.4750 Buy Now
Future Electronics ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 12 Weeks Container: Reel 0
Reel
  • 500 $0.4750
  • 1,500 $0.4600
  • 2,000 $0.4550
  • 5,000 $0.4400
  • 7,500 $0.4300
$0.4300 / $0.4750 Buy Now
Bristol Electronics   500
RFQ
Quest Components 4900 MA, 30 V, 2 CHANNEL, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, SOIC-8 400
  • 1 $1.6275
  • 62 $0.8138
  • 247 $0.6510
$0.6510 / $1.6275 Buy Now
Quest Components 4900 MA, 30 V, 2 CHANNEL, N-CHANNEL, SI, SMALL SIGNAL, MOSFET, SOIC-8 372
  • 1 $0.9765
  • 19 $0.5859
  • 86 $0.4557
$0.4557 / $0.9765 Buy Now
Ameya Holding Limited ZXMN3A06DN8 Series Dual N-Channel 30 V 0.035 Ohm Power MOSFET SMT - SOIC-8 2570
RFQ
DISTI # ZXMN3A06DN8TA
Avnet Silica Transistor MOSFET Array Dual N-CH 30V 6.2A 8-Pin SOIC T/R (Alt: ZXMN3A06DN8TA) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks, 0 Days Silica - 500
Buy Now
LCSC 30V 4.9A 1.8W 35m10V9A 1V250uA 2 N-Channel SOIC-8 MOSFETs ROHS 117
  • 1 $0.5026
  • 10 $0.3661
  • 30 $0.2818
  • 100 $0.2507
  • 500 $0.2319
  • 1,000 $0.2225
$0.2225 / $0.5026 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 500 500
  • 500 $0.7692
$0.7692 Buy Now

Part Details for ZXMN3A06DN8TA

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ZXMN3A06DN8TA Part Data Attributes

ZXMN3A06DN8TA Diodes Incorporated
Buy Now Datasheet
Compare Parts:
ZXMN3A06DN8TA Diodes Incorporated Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Part Package Code SOT
Package Description SOIC-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Diodes Incorporated
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4.9 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for ZXMN3A06DN8TA

This table gives cross-reference parts and alternative options found for ZXMN3A06DN8TA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMN3A06DN8TA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6930B_NL Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation ZXMN3A06DN8TA vs FDS6930B_NL
ZXMN3A06DN8TA Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Zetex / Diodes Inc ZXMN3A06DN8TA vs ZXMN3A06DN8TA
SI4936CDY-T1-E3 Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies ZXMN3A06DN8TA vs SI4936CDY-T1-E3
ZXMN3A06DN8TC Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Zetex / Diodes Inc ZXMN3A06DN8TA vs ZXMN3A06DN8TC
Part Number Description Manufacturer Compare
FDMB3800N Dual N-Channel PowerTrench® MOSFET 30V, 4.8A, 40mΩ, 3000-REEL onsemi ZXMN3A06DN8TA vs FDMB3800N
SI9936BDY-T1-E3 TRANSISTOR 4500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix ZXMN3A06DN8TA vs SI9936BDY-T1-E3
FDS6930B_NL Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation ZXMN3A06DN8TA vs FDS6930B_NL
SI9936BDY-E3 Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix ZXMN3A06DN8TA vs SI9936BDY-E3
SI9936BDY-T1-GE3 TRANSISTOR 4500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix ZXMN3A06DN8TA vs SI9936BDY-T1-GE3
SI4936CDY-T1-E3 Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies ZXMN3A06DN8TA vs SI4936CDY-T1-E3
BSO350N03 Small Signal Field-Effect Transistor, 5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8 Infineon Technologies AG ZXMN3A06DN8TA vs BSO350N03
SI9936BDY-T1-GE3 Small Signal Field-Effect Transistor, 4.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies ZXMN3A06DN8TA vs SI9936BDY-T1-GE3

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