Part Details for ZXMN10A08GTA by Zetex / Diodes Inc
Overview of ZXMN10A08GTA by Zetex / Diodes Inc
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for ZXMN10A08GTA
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85002833
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Verical | Trans MOSFET N-CH 100V 2A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2243 | Americas - 14000 |
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$0.2450 | Buy Now |
DISTI #
81716305
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Verical | Trans MOSFET N-CH 100V 2A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2336 | Americas - 8000 |
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$0.3016 / $0.3761 | Buy Now |
DISTI #
69694086
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Verical | Trans MOSFET N-CH 100V 2A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 230 Package Multiple: 1 Date Code: 2327 | Americas - 230 |
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$0.2261 | Buy Now |
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Bristol Electronics | 683 |
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RFQ |
Part Details for ZXMN10A08GTA
ZXMN10A08GTA CAD Models
ZXMN10A08GTA Part Data Attributes
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ZXMN10A08GTA
Zetex / Diodes Inc
Buy Now
Datasheet
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ZXMN10A08GTA
Zetex / Diodes Inc
Power Field-Effect Transistor, 2A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | ZETEX PLC | |
Package Description | TO-261AA, 4 PIN | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 0.25 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-261AA | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 11 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |