Datasheets
ZVP2110G by:
Diodes Incorporated
Diodes Incorporated
Zetex / Diodes Inc
Not Found

Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Part Details for ZVP2110G by Diodes Incorporated

Results Overview of ZVP2110G by Diodes Incorporated

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ZVP2110G Information

ZVP2110G by Diodes Incorporated is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for ZVP2110G

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ZVP2110G Part Data Attributes

ZVP2110G Diodes Incorporated
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ZVP2110G Diodes Incorporated Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Part Package Code SOT-223
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.31 A
Drain-source On Resistance-Max 8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for ZVP2110G

This table gives cross-reference parts and alternative options found for ZVP2110G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZVP2110G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
ZVP2110GTC Diodes Incorporated Check for Price Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN ZVP2110G vs ZVP2110GTC
Part Number Manufacturer Composite Price Description Compare
ZVP2110GTA Zetex / Diodes Inc Check for Price Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN ZVP2110G vs ZVP2110GTA
ZVP2110GTA Diodes Incorporated $0.6523 Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN ZVP2110G vs ZVP2110GTA

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