Datasheets
ZVNL120GTA by:

Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Part Details for ZVNL120GTA by Diodes Incorporated

Overview of ZVNL120GTA by Diodes Incorporated

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Price & Stock for ZVNL120GTA

Part # Distributor Description Stock Price Buy
DISTI # 29AK9107
Newark Mosfet, N-Ch, 200V, 0.32A, Sot-223 Rohs Compliant: Yes |Diodes Inc. ZVNL120GTA RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1895
  • 1 $0.9570
  • 10 $0.8130
  • 25 $0.7300
  • 50 $0.6480
  • 100 $0.5650
  • 250 $0.5020
  • 500 $0.4390
  • 1,000 $0.4070
$0.4070 / $0.9570 Buy Now
DISTI # ZVNL120GCT-ND
DigiKey MOSFET N-CH 200V 320MA SOT223 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Tape & Reel (TR) 6357
In Stock
  • 1 $1.0500
  • 10 $0.7050
  • 100 $0.4888
  • 500 $0.3915
  • 1,000 $0.3596
  • 2,000 $0.3325
  • 3,000 $0.3185
  • 5,000 $0.3118
$0.3118 / $1.0500 Buy Now
DISTI # ZVNL120GTA
Avnet Americas Trans MOSFET N-CH 200V 0.32A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: ZVNL120GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Reel 70000 Factory Stock
  • 1,000 $0.2883
$0.2883 Buy Now
DISTI # 522-ZVNL120GTA
Mouser Electronics MOSFETs N-Chnl 200V RoHS: Compliant 1756
  • 1 $1.0600
  • 10 $0.8060
  • 100 $0.5230
  • 500 $0.4050
  • 1,000 $0.3870
  • 2,000 $0.3430
  • 5,000 $0.3420
$0.3420 / $1.0600 Buy Now
DISTI # V72:2272_06707919
Arrow Electronics Trans MOSFET N-CH 200V 0.32A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 267 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2322 Container: Cut Strips Americas - 550
  • 267 $0.3741
  • 500 $0.2719
$0.2719 / $0.3741 Buy Now
Future Electronics ZVNL120G Series 200V 10 Ohm N-Channel Enhancement Mode Vertical DMOS FET-SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel 67000
Reel
  • 1,000 $0.3500
  • 2,000 $0.3400
  • 3,000 $0.3350
  • 4,000 $0.3350
  • 5,000 $0.3250
$0.3250 / $0.3500 Buy Now
Future Electronics ZVNL120G Series 200V 10 Ohm N-Channel Enhancement Mode Vertical DMOS FET-SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 1,000 $0.3500
  • 2,000 $0.3400
  • 3,000 $0.3350
  • 4,000 $0.3350
  • 5,000 $0.3250
$0.3250 / $0.3500 Buy Now
Bristol Electronics   Min Qty: 7 81
  • 7 $0.7500
  • 28 $0.4875
$0.4875 / $0.7500 Buy Now
Quest Components MOSFET Transistor, N-Channel, SOT-223 64
  • 1 $1.0000
  • 6 $0.8000
  • 26 $0.5000
$0.5000 / $1.0000 Buy Now
DISTI # ZVNL120GTA
TME Transistor: N-MOSFET, unipolar, 200V, 0.32A, 2W, SOT223 Min Qty: 1 983
  • 1 $0.8840
  • 10 $0.7620
  • 100 $0.5300
  • 250 $0.4550
  • 500 $0.4110
  • 1,000 $0.3750
  • 5,000 $0.3590
$0.3590 / $0.8840 Buy Now
ComSIT USA Electronic Component RoHS: Compliant Stock EU - 804
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # ZVNL120GTA
Avnet Silica Trans MOSFET N-CH 200V 0.32A 4-Pin(3+Tab) SOT-223 T/R (Alt: ZVNL120GTA) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Silica - 1000
Buy Now
LCSC 200V 320mA 2W 105V250mA 1.5V1mA 1 N-Channel SOT-223-3 MOSFETs ROHS 59
  • 1 $0.5822
  • 10 $0.4831
  • 30 $0.4328
  • 100 $0.3840
  • 500 $0.3541
  • 1,000 $0.3383
$0.3383 / $0.5822 Buy Now
New Advantage Corporation ZVNL120G Series 200V 10 Ohm N-Channel Enhancement Mode Vertical DMOS FET-SOT-223 RoHS: Compliant Min Qty: 1 Package Multiple: 1000 54000
  • 1,000 $0.3857
  • 54,000 $0.3600
$0.3600 / $0.3857 Buy Now

Part Details for ZVNL120GTA

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ZVNL120GTA Part Data Attributes

ZVNL120GTA Diodes Incorporated
Buy Now Datasheet
Compare Parts:
ZVNL120GTA Diodes Incorporated Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Part Package Code SOT-223
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.32 A
Drain-source On Resistance-Max 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 2 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for ZVNL120GTA

This table gives cross-reference parts and alternative options found for ZVNL120GTA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZVNL120GTA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ZVNL120GTA Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Zetex / Diodes Inc ZVNL120GTA vs ZVNL120GTA
ZVNL120G Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated ZVNL120GTA vs ZVNL120G
ZVNL120GTC Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated ZVNL120GTA vs ZVNL120GTC
ZVNL120G Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Zetex / Diodes Inc ZVNL120GTA vs ZVNL120G
Part Number Description Manufacturer Compare
ZVNL120G Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Diodes Incorporated ZVNL120GTA vs ZVNL120G
ZVNL120GTC Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Zetex / Diodes Inc ZVNL120GTA vs ZVNL120GTC
ZVNL120G Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Zetex / Diodes Inc ZVNL120GTA vs ZVNL120G
ZVNL120GTA Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Zetex / Diodes Inc ZVNL120GTA vs ZVNL120GTA

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