Datasheets
ZVN4206GV by:

Power Field-Effect Transistor, 1A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Part Details for ZVN4206GV by Diodes Incorporated

Overview of ZVN4206GV by Diodes Incorporated

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for ZVN4206GV

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ZVN4206GV Part Data Attributes

ZVN4206GV Diodes Incorporated
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ZVN4206GV Diodes Incorporated Power Field-Effect Transistor, 1A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Part Package Code SOT-223
Package Description SOT-223, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for ZVN4206GV

This table gives cross-reference parts and alternative options found for ZVN4206GV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZVN4206GV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ZVN4206GVTC Power Field-Effect Transistor, 1A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Zetex / Diodes Inc ZVN4206GV vs ZVN4206GVTC
Part Number Description Manufacturer Compare
BSP205TRL TRANSISTOR 0.25 A, 50 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors ZVN4206GV vs BSP205TRL
BSP206-TAPE-13 TRANSISTOR 0.35 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors ZVN4206GV vs BSP206-TAPE-13
BSP206TRL13 Power Field-Effect Transistor, 0.3A I(D), 60V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET YAGEO Corporation ZVN4206GV vs BSP206TRL13
ZVN4206GVTC Power Field-Effect Transistor, 1A I(D), 60V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Zetex / Diodes Inc ZVN4206GV vs ZVN4206GVTC
BSP206TRL Power Field-Effect Transistor, 0.3A I(D), 60V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET YAGEO Corporation ZVN4206GV vs BSP206TRL
BSP205-TAPE-13 TRANSISTOR 0.275 A, 60 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors ZVN4206GV vs BSP205-TAPE-13
BSP206 TRANSISTOR 0.35 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-223, 4 PIN, FET General Purpose Power NXP Semiconductors ZVN4206GV vs BSP206
BSP206-T TRANSISTOR 0.35 A, 60 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors ZVN4206GV vs BSP206-T
BSP205TRL13 TRANSISTOR 0.25 A, 50 V, 10 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors ZVN4206GV vs BSP205TRL13

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