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Transistors Power Field-Effect Transistors ZVN2106G

Transistors
ZVN2106G
Description: Power Field-Effect Transistor, 0.71A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Overview of ZVN2106G by Diodes Incorporated

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for ZVN2106G by Diodes Incorporated

Part # Manufacturer Description Stock Price Buy
DISTI # 26M5002
Newark Mosfet, N, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:700Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V, Power Dissipation:2W Rohs Compliant: Yes |Diodes Inc. ZVN2106G RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 25
  • 1 $1.1300
  • 10 $0.9300
  • 25 $0.8290
  • 50 $0.7450
  • 100 $0.6460
  • 250 $0.5750
$0.5750 / $1.1300 Buy Now
DISTI # 86AK6591
Newark Mosfet, N-Ch, 60V, 0.7A, Sot-223 Rohs Compliant: Yes |Diodes Inc. ZVN2106G RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 1,000 $0.4590
  • 2,000 $0.4280
  • 4,000 $0.4040
  • 6,000 $0.3810
  • 10,000 $0.3660
$0.3660 / $0.4590 Buy Now
DISTI # ZVN2106G
TME Transistor: N-MOSFET, unipolar, 60V, 0.7A, 2W, SOT223 Min Qty: 1 63
  • 1 $0.8220
  • 25 $0.5320
  • 50 $0.4770
  • 250 $0.3840
  • 500 $0.3560
  • 1,000 $0.3350
  • 2,000 $0.3340
$0.3340 / $0.8220 Buy Now
DISTI # SMC-ZVN2106G
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 2018+ 310
RFQ

CAD Models for ZVN2106G by Diodes Incorporated
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Part Data Attributes for ZVN2106G by Diodes Incorporated
Parametric Data

ZVN2106G
Diodes Incorporated
Buy Now
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
DIODES INC
Part Package Code
SOT-223
Package Description
SOT-223, 4 PIN
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Diodes Incorporated
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
0.71 A
Drain-source On Resistance-Max
2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
8 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. ZVN2106G
    Diodes Incorporated
    Power Field-Effect Transistor, 0.71A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
    VS

Alternate Parts for ZVN2106G

This table gives cross-reference parts and alternative options found for ZVN2106G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZVN2106G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
ZVN2106GTC Power Field-Effect Transistor, 0.71A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Zetex / Diodes Inc ZVN2106G vs ZVN2106GTC

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