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Power Field-Effect Transistor, 20A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
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XPN7R104NC | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 40 V, 20 A, 0.0071 Ω@10V, TSON Advance(WF) |
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
264-XPN7R104NCL1XHQCT-ND
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DigiKey | MOSFET N-CH 40V 20A 8TSON Min Qty: 1 Lead time: 32 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
11845 In Stock |
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$0.4500 / $1.7300 | Buy Now |
DISTI #
XPN7R104NC,L1XHQ
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Avnet Americas | Transistor MOSFET N-CH 40V 20A 8-Pin TSON Advance - Tape and Reel (Alt: XPN7R104NC,L1XHQ) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 32 Weeks, 0 Days Container: Reel | 5000 |
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$0.2950 | Buy Now |
DISTI #
757-XPN7R104NC,L1XHQ
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Mouser Electronics | MOSFETs 65W 1MHz Automotive, AEC-Q101 RoHS: Compliant | 2549 |
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$0.4500 / $1.3900 | Buy Now |
DISTI #
V72:2272_26162290
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Arrow Electronics | Trans MOSFET N-CH Si 40V 20A Automotive AEC-Q101 8-Pin SOP Advance(WF) T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks Date Code: 2322 Container: Cut Strips | Americas - 3490 |
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$0.3026 / $0.3598 | Buy Now |
DISTI #
68460929
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Verical | Trans MOSFET N-CH Si 40V 20A Automotive AEC-Q101 8-Pin SOP Advance(WF) T/R RoHS: Compliant Min Qty: 20 Package Multiple: 1 Date Code: 2322 | Americas - 3490 |
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$0.3026 / $0.3384 | Buy Now |
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XPN7R104NC,L1XHQ
Toshiba America Electronic Components
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Datasheet
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Compare Parts:
XPN7R104NC,L1XHQ
Toshiba America Electronic Components
Power Field-Effect Transistor, 20A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | TSON-8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Avalanche Energy Rating (Eas) | 83 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.0142 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 90 pF | |
JESD-30 Code | S-PDSO-F8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |