Part Details for W632GG8KB12I by Winbond Electronics Corp
Overview of W632GG8KB12I by Winbond Electronics Corp
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for W632GG8KB12I
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
W632GG8KB12I-ND
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DigiKey | IC DRAM 2GBIT PARALLEL 78WBGA Lead time: 28 Weeks Container: Tray | Limited Supply - Call |
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Buy Now | |
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NAC | 2Gb DDR3 SDRAM, x8, 800MHz Ind Temp, WBGA78 Package RoHS: Compliant Min Qty: 242 Package Multiple: 242 | 0 |
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RFQ |
Part Details for W632GG8KB12I
W632GG8KB12I CAD Models
W632GG8KB12I Part Data Attributes
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W632GG8KB12I
Winbond Electronics Corp
Buy Now
Datasheet
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W632GG8KB12I
Winbond Electronics Corp
DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, 8 X 10.50 MM, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-78
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
Part Package Code | BGA | |
Package Description | TFBGA, BGA78,9X13,32 | |
Pin Count | 78 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.225 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 800 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B78 | |
Length | 10.5 mm | |
Memory Density | 2147483648 bit | |
Memory IC Type | DDR3 DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 78 | |
Number of Words | 268435456 words | |
Number of Words Code | 256000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 256MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA78,9X13,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.019 A | |
Supply Current-Max | 0.34 mA | |
Supply Voltage-Max (Vsup) | 1.575 V | |
Supply Voltage-Min (Vsup) | 1.425 V | |
Supply Voltage-Nom (Vsup) | 1.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 8 mm |
Alternate Parts for W632GG8KB12I
This table gives cross-reference parts and alternative options found for W632GG8KB12I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W632GG8KB12I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT41J256M8HX-15EIT:D | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | W632GG8KB12I vs MT41J256M8HX-15EIT:D |
NT5CC256M8BN-CG | DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-78 | Nanya Technology Corporation | W632GG8KB12I vs NT5CC256M8BN-CG |
MT41J256M8HX-15E:D | DDR DRAM, 256MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Silicon360 | W632GG8KB12I vs MT41J256M8HX-15E:D |
IS43TR82560CL-15HBLI-TR | DDR DRAM, | Integrated Silicon Solution Inc | W632GG8KB12I vs IS43TR82560CL-15HBLI-TR |
MT41J256M8HX-15E:D | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | W632GG8KB12I vs MT41J256M8HX-15E:D |
MT41J256M8HX-15EIT:D | DDR DRAM, 256MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Silicon360 | W632GG8KB12I vs MT41J256M8HX-15EIT:D |
MT41J256M8HX-15EAIT | DDR DRAM, | Micron Technology Inc | W632GG8KB12I vs MT41J256M8HX-15EAIT |
NT5CB256M8BN-CF | DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-78 | Nanya Technology Corporation | W632GG8KB12I vs NT5CB256M8BN-CF |
IS43TR82560C-15HBL-TR | DDR DRAM, | Integrated Silicon Solution Inc | W632GG8KB12I vs IS43TR82560C-15HBL-TR |
MT41J256M8HX-15EAAT:D | DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 | Micron Technology Inc | W632GG8KB12I vs MT41J256M8HX-15EAAT:D |