Part Details for W632GG6KB12I by Winbond Electronics Corp
Overview of W632GG6KB12I by Winbond Electronics Corp
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for W632GG6KB12I
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
W632GG6KB12I-ND
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DigiKey | IC DRAM 2GBIT PARALLEL 96WBGA Lead time: 28 Weeks Container: Tray | Limited Supply - Call |
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Buy Now | |
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NAC | 2Gb DDR3 SDRAM, x16, 800MHz, Industrial Temp, WBGA96 Package RoHS: Compliant Min Qty: 190 Package Multiple: 190 | 0 |
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RFQ |
Part Details for W632GG6KB12I
W632GG6KB12I CAD Models
W632GG6KB12I Part Data Attributes
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W632GG6KB12I
Winbond Electronics Corp
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Datasheet
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W632GG6KB12I
Winbond Electronics Corp
DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WINBOND ELECTRONICS CORP | |
Part Package Code | BGA | |
Package Description | 9 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96 | |
Pin Count | 96 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Samacsys Manufacturer | Winbond | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.225 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 800 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 8 | |
JESD-30 Code | R-PBGA-B96 | |
JESD-609 Code | e1 | |
Length | 13 mm | |
Memory Density | 2147483648 bit | |
Memory IC Type | DDR3 DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 96 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 128MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA96,9X16,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 8 | |
Standby Current-Max | 0.07 A | |
Supply Current-Max | 0.38 mA | |
Supply Voltage-Max (Vsup) | 1.575 V | |
Supply Voltage-Min (Vsup) | 1.425 V | |
Supply Voltage-Nom (Vsup) | 1.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 9 mm |
Alternate Parts for W632GG6KB12I
This table gives cross-reference parts and alternative options found for W632GG6KB12I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W632GG6KB12I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MT41K128M16JT-125 | DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | W632GG6KB12I vs MT41K128M16JT-125 |
W632GU6KB-12 | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, WBGA-96 | Winbond Electronics Corp | W632GG6KB12I vs W632GU6KB-12 |
MT41K128M16JT-125XIT:K | DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | W632GG6KB12I vs MT41K128M16JT-125XIT:K |
MT41K128M16JT-125AAT:K | DDR DRAM, 128MX16, CMOS, PBGA96, FBGA-96 | Micron Technology Inc | W632GG6KB12I vs MT41K128M16JT-125AAT:K |
MT41K128M16JT-125AIT:KT | DDR DRAM, | Micron Technology Inc | W632GG6KB12I vs MT41K128M16JT-125AIT:KT |
MT41K128M16JT-125M:K | DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | W632GG6KB12I vs MT41K128M16JT-125M:K |
MT41K128M16JT-125:K | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, 8 X 14 MM, LEAD FREE, FBGA-96 | Micron Technology Inc | W632GG6KB12I vs MT41K128M16JT-125:K |
MT41K128M16JT-125XIT:KT | DDR DRAM, | Micron Technology Inc | W632GG6KB12I vs MT41K128M16JT-125XIT:KT |
MT41K128M16JT-125:KTR | DDR DRAM, 128MX16, CMOS, PBGA96, 8 X 14 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-96 | Micron Technology Inc | W632GG6KB12I vs MT41K128M16JT-125:KTR |
W632GU6KB12A | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, 9 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-96 | Winbond Electronics Corp | W632GG6KB12I vs W632GU6KB12A |