Datasheets
VS-GT100TP120N by: Vishay Intertechnologies

Insulated Gate Bipolar Transistor

Part Details for VS-GT100TP120N by Vishay Intertechnologies

Overview of VS-GT100TP120N by Vishay Intertechnologies

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for VS-GT100TP120N

Part # Distributor Description Stock Price Buy
DISTI # VS-GT100TP120N
Avnet Americas OUTPUT & SW MODULES - IAP IGBT - Bulk (Alt: VS-GT100TP120N) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Container: Bulk 0
RFQ

Part Details for VS-GT100TP120N

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VS-GT100TP120N Part Data Attributes:

VS-GT100TP120N Vishay Intertechnologies
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VS-GT100TP120N Vishay Intertechnologies Insulated Gate Bipolar Transistor
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description MODULE-7
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection ISOLATED
Collector Current-Max (IC) 180 A
Collector-Emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7.5 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 652 W
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 407 ns
Turn-on Time-Nom (ton) 247 ns
VCEsat-Max 2.35 V

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