Datasheets
VS-GB75LP120N by: Vishay Intertechnologies

Insulated Gate Bipolar Transistor

Part Details for VS-GB75LP120N by Vishay Intertechnologies

Overview of VS-GB75LP120N by Vishay Intertechnologies

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Price & Stock for VS-GB75LP120N

Part # Distributor Description Stock Price Buy
DISTI # VS-GB75LP120N
Avnet Americas OUTPUT & SW MODULES - IAP IGBT - Bulk (Alt: VS-GB75LP120N) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Container: Bulk 0
RFQ

Part Details for VS-GB75LP120N

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VS-GB75LP120N Part Data Attributes

VS-GB75LP120N Vishay Intertechnologies
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VS-GB75LP120N Vishay Intertechnologies Insulated Gate Bipolar Transistor
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description MODULE-5
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection ISOLATED
Collector Current-Max (IC) 170 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 7 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X5
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 658 W
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 464 ns
Turn-on Time-Nom (ton) 190 ns

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