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VRF148AMP by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.375 INCH, ROHS COMPLIANT, M113, SOE, 4 PIN

Part Details for VRF148AMP by Microsemi Corporation

Overview of VRF148AMP by Microsemi Corporation

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Applications Consumer Electronics Financial Technology (Fintech) Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Communication and Networking

Part Details for VRF148AMP

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VRF148AMP Part Data Attributes

VRF148AMP Microsemi Corporation
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VRF148AMP Microsemi Corporation RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.375 INCH, ROHS COMPLIANT, M113, SOE, 4 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Package Description 0.375 INCH, ROHS COMPLIANT, M113, SOE, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Microsemi Corporation
Configuration SINGLE
DS Breakdown Voltage-Min 170 V
Drain Current-Max (ID) 6 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 115 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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