Part Details for VQ1006P by Vishay Siliconix
Overview of VQ1006P by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Telecommunications
Automotive
Robotics and Drones
Price & Stock for VQ1006P
| Part # | Distributor | Description | Stock | Price | Buy | |
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ES Components | SILICONIX VQ1006P Commercial Marked and Tested | 17 in Stock |
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RFQ |
Part Details for VQ1006P
VQ1006P CAD Models
VQ1006P Part Data Attributes:
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VQ1006P
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
VQ1006P
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SILICONIX INC | |
| Part Package Code | DIP | |
| Pin Count | 14 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Drain Current-Max (ID) | 0.4 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e0 | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for VQ1006P
This table gives cross-reference parts and alternative options found for VQ1006P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1006P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTXV2N7334 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | Defense Logistics Agency | VQ1006P vs JANTXV2N7334 |
| 2N7334 | Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB | International Rectifier | VQ1006P vs 2N7334 |
| JANTXV2N7334 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | International Rectifier | VQ1006P vs JANTXV2N7334 |
| IRFG110 | Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN | International Rectifier | VQ1006P vs IRFG110 |