Datasheets
VQ1004P-2 by:
Vishay Siliconix
Temic Semiconductors
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for VQ1004P-2 by Vishay Siliconix

Results Overview of VQ1004P-2 by Vishay Siliconix

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

VQ1004P-2 Information

VQ1004P-2 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for VQ1004P-2

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VQ1004P-2 Part Data Attributes

VQ1004P-2 Vishay Siliconix
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VQ1004P-2 Vishay Siliconix Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.46 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code R-PDIP-T14
Number of Elements 4
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 2 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 10 ns
Turn-on Time-Max (ton) 10 ns

VQ1004P-2 Related Parts

VQ1004P-2 Frequently Asked Questions (FAQ)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a minimum of 2 oz copper thickness, and ensuring good thermal conduction to the surrounding copper area. A thermal via array can also be used to improve heat dissipation.

  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, use a suitable thermal interface material, and consider derating the device's power dissipation according to the temperature rating.

  • The recommended soldering conditions for the VQ1004P-2 involve using a peak temperature of 260°C (500°F) for a maximum of 10 seconds, with a soldering iron temperature of 350°C (662°F) and a soldering time of 3 seconds maximum.

  • Yes, the VQ1004P-2 is qualified to AEC-Q101 standards, making it suitable for high-reliability and automotive applications. However, it's essential to follow the recommended design and testing guidelines to ensure the device meets the specific requirements of the application.

  • To handle ESD protection for the VQ1004P-2, it's recommended to follow proper handling and storage procedures, use ESD-protective packaging and materials, and consider adding external ESD protection devices or circuits to the design.