Datasheets
VQ1000J by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for VQ1000J by Vishay Intertechnologies

Overview of VQ1000J by Vishay Intertechnologies

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Applications Industrial Automation Electronic Manufacturing Automotive Robotics and Drones

Part Details for VQ1000J

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VQ1000J Part Data Attributes:

VQ1000J Vishay Intertechnologies
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VQ1000J Vishay Intertechnologies Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description IN-LINE, R-PDIP-T14
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature FAST SWITCHING
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.025 A
Drain-source On Resistance-Max 5.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T14
JESD-609 Code e0
Number of Elements 4
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 1 A
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 10 ns
Turn-on Time-Max (ton) 10 ns

Alternate Parts for VQ1000J

This table gives cross-reference parts and alternative options found for VQ1000J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VQ1000J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
VQ1000P Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1000J vs VQ1000P
VQ1000P Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1000J vs VQ1000P
Part Number Description Manufacturer Compare
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Supertex Inc VQ1000J vs VQ1004J
VQ1000J Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix VQ1000J vs VQ1000J
ZVN3306E 0.27A, 60V, 5ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DIP-14 Diodes Incorporated VQ1000J vs ZVN3306E
VQ1000P Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1000J vs VQ1000P
VQ1000N6 Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Supertex Inc VQ1000J vs VQ1000N6
VQ1004J Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1000J vs VQ1004J
VQ1001P Power Field-Effect Transistor, 0.53A I(D), 30V, 1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Temic Semiconductors VQ1000J vs VQ1001P
RBVQ1000N7 Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, CERAMIC, DIP-14 Supertex Inc VQ1000J vs RBVQ1000N7
ZVN4206E Power Field-Effect Transistor, 0.6A I(D), 60V, 1.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DIP-14 Zetex / Diodes Inc VQ1000J vs ZVN4206E
VQ1004P Power Field-Effect Transistor, 0.46A I(D), 60V, 3.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-14 Vishay Intertechnologies VQ1000J vs VQ1004P

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