Datasheets
VQ1000J by:

Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, DIP-14

Part Details for VQ1000J by Calogic Inc

Overview of VQ1000J by Calogic Inc

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Applications Industrial Automation Electronic Manufacturing Automotive Robotics and Drones

Part Details for VQ1000J

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VQ1000J Part Data Attributes:

VQ1000J Calogic Inc
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VQ1000J Calogic Inc Power Field-Effect Transistor, 0.225A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIDE BRAZED, DIP-14
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer CALOGIC LLC
Part Package Code DIP
Package Description IN-LINE, R-CDIP-T14
Pin Count 14
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.90.00.00
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.225 A
Drain-source On Resistance-Max 5.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-CDIP-T14
JESD-609 Code e0
Number of Elements 4
Number of Terminals 14
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 1 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 10 ns
Turn-on Time-Max (ton) 10 ns

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