Datasheets
VP0808L by:

Transistor,

Part Details for VP0808L by Topaz Semiconductor

Overview of VP0808L by Topaz Semiconductor

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Applications Space Technology Computing and Data Storage Aerospace and Defense Energy and Power Systems Electronic Manufacturing Renewable Energy Robotics and Drones

Part Details for VP0808L

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VP0808L Part Data Attributes:

VP0808L Topaz Semiconductor
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VP0808L Topaz Semiconductor Transistor,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer TOPAZ SEMICONDUCTOR
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 0.21 A
Drain-source On Resistance-Max 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JEDEC-95 Code TO-226AA
JESD-30 Code O-PBCY-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 3 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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