Datasheets
VN2460N8 by:

Power Field-Effect Transistor, 0.2A I(D), 600V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, SAME AS SOT-89, 3 PIN

Part Details for VN2460N8 by Supertex Inc

Overview of VN2460N8 by Supertex Inc

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Applications Industrial Automation Renewable Energy Automotive Robotics and Drones Motor control systems

Price & Stock for VN2460N8

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 3 19
  • 3 $1.8000
  • 13 $1.1700
$1.1700 / $1.8000 Buy Now
Quest Components 0.2 A, 600 V, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA 16
  • 1 $1.9500
  • 4 $1.7940
  • 15 $1.5600
$1.5600 / $1.9500 Buy Now
Quest Components 0.2 A, 600 V, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA 15
  • 1 $2.4000
  • 3 $1.9200
  • 11 $1.2000
$1.2000 / $2.4000 Buy Now
Chip1Cloud N-Channel Enhancement-Mode Vertical DMOS FETs 15500
RFQ

Part Details for VN2460N8

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VN2460N8 Part Data Attributes:

VN2460N8 Supertex Inc
Buy Now Datasheet
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VN2460N8 Supertex Inc Power Field-Effect Transistor, 0.2A I(D), 600V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, SAME AS SOT-89, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SUPERTEX INC
Part Package Code SOT-89
Package Description SMALL OUTLINE, R-PSSO-F3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW THRESHOLD
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 0.6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form FLAT
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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