Part Details for VN2450N8-G by Microchip Technology Inc
Overview of VN2450N8-G by Microchip Technology Inc
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for VN2450N8-G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
53Y4333
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Newark | Mosfet, N-Channel Enhancement-Mode, 500V, 13 Ohm 3 Sot-89 T/R Rohs Compliant: Yes |Microchip VN2450N8-G RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1700 | Buy Now |
DISTI #
VN2450N8-GCT-ND
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DigiKey | MOSFET N-CH 500V 250MA TO243AA Min Qty: 1 Lead time: 7 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
12306 In Stock |
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$1.1300 / $1.5000 | Buy Now |
DISTI #
VN2450N8-G
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Avnet Americas | Trans MOSFET N-CH 500V 0.25A 3-Pin SOT-89 T/R - Tape and Reel (Alt: VN2450N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 7 Weeks, 0 Days Container: Reel | 0 |
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$1.1300 / $1.5000 | Buy Now |
DISTI #
689-VN2450N8-G
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Mouser Electronics | MOSFETs 500V 13Ohm RoHS: Compliant | 2031 |
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$1.0800 / $1.3300 | Buy Now |
DISTI #
VN2450N8-G
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Microchip Technology Inc | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 13 Ohm, Projected EOL: 2034-09-22 RoHS: Compliant pbFree: Yes |
340 Alternates Available |
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$0.8800 / $1.5000 | Buy Now |
DISTI #
70451680
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RS | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 13 Ohm3 SOT-89 T/R | Microchip Technology Inc. VN2450N8-G RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Lead time: 52 Weeks, 0 Days Container: Bulk | 0 |
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$1.2100 / $1.4300 | RFQ |
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Future Electronics | MOSFET N-CH 500V 0.25A 3-Pin SOT-89 T/R RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 7 Weeks Container: Reel | 0Reel |
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$1.0700 / $1.1000 | Buy Now |
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Onlinecomponents.com | Trans MOSFET N-CH Si 500V 0.25A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant |
8000 In Stock |
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$0.9920 / $1.1020 | Buy Now |
DISTI #
69097682
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Verical | Trans MOSFET N-CH Si 500V 0.25A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant Min Qty: 500 Package Multiple: 500 Date Code: 2321 | Americas - 8000 |
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$1.1995 / $1.3333 | Buy Now |
DISTI #
77908995
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Verical | Trans MOSFET N-CH Si 500V 0.25A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant Min Qty: 21 Package Multiple: 1 | Americas - 524 |
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$2.7562 / $3.8624 | Buy Now |
Part Details for VN2450N8-G
VN2450N8-G CAD Models
VN2450N8-G Part Data Attributes
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VN2450N8-G
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
VN2450N8-G
Microchip Technology Inc
0.25A, 500V, 13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 7 Weeks | |
Samacsys Manufacturer | Microchip | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 0.25 A | |
Drain-source On Resistance-Max | 13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 25 pF | |
JEDEC-95 Code | TO-243AA | |
JESD-30 Code | R-PSSO-F3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Pulsed Drain Current-Max (IDM) | 0.75 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 45 ns | |
Turn-on Time-Max (ton) | 20 ns |
Alternate Parts for VN2450N8-G
This table gives cross-reference parts and alternative options found for VN2450N8-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VN2450N8-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
UFN321 | Power Field-Effect Transistor, 3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | VN2450N8-G vs UFN321 |
UFN323 | Power Field-Effect Transistor, 2.5A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | VN2450N8-G vs UFN323 |
RFM4N35 | Power Field-Effect Transistor, 4A I(D), 350V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | VN2450N8-G vs RFM4N35 |
IRF333R | Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | VN2450N8-G vs IRF333R |
IRF321 | Power Field-Effect Transistor, 3.3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | VN2450N8-G vs IRF321 |
IRF321 | Power Field-Effect Transistor, 3.3A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | VN2450N8-G vs IRF321 |
IRF333 | Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | VN2450N8-G vs IRF333 |
IRF323 | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | VN2450N8-G vs IRF323 |
IRF323 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-204AA | Intersil Corporation | VN2450N8-G vs IRF323 |
2N6759 | Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | VN2450N8-G vs 2N6759 |