Datasheets
VMO650-01F by:

Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for VMO650-01F by IXYS Corporation

Overview of VMO650-01F by IXYS Corporation

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Applications Consumer Electronics Security and Surveillance

Price & Stock for VMO650-01F

Part # Distributor Description Stock Price Buy
DISTI # VMO650-01F-ND
DigiKey MOSFET N-CH 100V 690A Y3-DCB Min Qty: 1 Lead time: 76 Weeks Container: Bulk 2
In Stock
  • 1 $217.5100
$217.5100 Buy Now
DISTI # VMO650-01F
TME Module, single transistor, 100V, 690A, Y3-DCB, Idm: 2.78kA, 2.5kW Min Qty: 1 0
  • 1 $298.5800
  • 2 $263.1400
  • 4 $237.3700
$237.3700 / $298.5800 RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 2
  • 1 $153.8500
  • 100 $115.3800
  • 1,000 $100.0000
$100.0000 / $153.8500 Buy Now
New Advantage Corporation MOSFET MOD.690A 100V N-CH Y3-DCB HIPERFET CHASSIS RoHS: Compliant Min Qty: 1 Package Multiple: 1 5
  • 1 $435.3700
  • 5 $406.3400
$406.3400 / $435.3700 Buy Now

Part Details for VMO650-01F

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VMO650-01F Part Data Attributes

VMO650-01F IXYS Corporation
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VMO650-01F IXYS Corporation Power Field-Effect Transistor, 690A I(D), 100V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 690 A
Drain-source On Resistance-Max 0.0018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2500 W
Pulsed Drain Current-Max (IDM) 2780 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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