Part Details for VHB1-12T by Advanced Semiconductor Inc
Overview of VHB1-12T by Advanced Semiconductor Inc
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Part Details for VHB1-12T
VHB1-12T CAD Models
VHB1-12T Part Data Attributes
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VHB1-12T
Advanced Semiconductor Inc
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VHB1-12T
Advanced Semiconductor Inc
RF Small Signal Bipolar Transistor, 0.4A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-39, TO-39, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
Part Package Code | TO-39 | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | EMITTER | |
Collector Current-Max (IC) | 0.4 A | |
Collector-Base Capacitance-Max | 4 pF | |
Collector-Emitter Voltage-Max | 20 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 10 | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 200 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 3.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |