Part Details for VG36641641DT-6 by Vanguard International Semiconductor Corporation
Overview of VG36641641DT-6 by Vanguard International Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for VG36641641DT-6
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 4M X 16 SYNCHRONOUS DRAM, 5 NS, TSOP2-54 | 90 |
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Buy Now |
Part Details for VG36641641DT-6
VG36641641DT-6 CAD Models
VG36641641DT-6 Part Data Attributes:
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VG36641641DT-6
Vanguard International Semiconductor Corporation
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Datasheet
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VG36641641DT-6
Vanguard International Semiconductor Corporation
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VANGUARD INTERNATIONAL SEMICONDUCTOR CORP | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 167 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.15 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for VG36641641DT-6
This table gives cross-reference parts and alternative options found for VG36641641DT-6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VG36641641DT-6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| W9864G6GH-6I | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | Winbond Electronics Corp | VG36641641DT-6 vs W9864G6GH-6I |
| K4S641632K-UP600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 | Samsung Semiconductor | VG36641641DT-6 vs K4S641632K-UP600 |
| V54C36516G4VT6 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | VG36641641DT-6 vs V54C36516G4VT6 |
| K4S641632H-TC600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, TSOP2-54 | Samsung Semiconductor | VG36641641DT-6 vs K4S641632H-TC600 |
| K4S641632K-TI600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INTCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | VG36641641DT-6 vs K4S641632K-TI600 |
| HY57V651621TC-7 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | VG36641641DT-6 vs HY57V651621TC-7 |
| K4S641632E-TL550 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | VG36641641DT-6 vs K4S641632E-TL550 |
| VG36641641DT-5L | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Vanguard International Semiconductor Corporation | VG36641641DT-6 vs VG36641641DT-5L |
| IS42S16400E-6TLI | 4MX16 SYNCHRONOUS DRAM, 5ns, PDSO54, 0.400 INCH, LEAD FREE, TSPO2-54 | ABLIC Inc. | VG36641641DT-6 vs IS42S16400E-6TLI |
| K4S641632E-TC550 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | VG36641641DT-6 vs K4S641632E-TC550 |