Part Details for V58C365164SAT36 by Mosel Vitelic Corporation
Overview of V58C365164SAT36 by Mosel Vitelic Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for V58C365164SAT36
V58C365164SAT36 CAD Models
V58C365164SAT36 Part Data Attributes:
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V58C365164SAT36
Mosel Vitelic Corporation
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V58C365164SAT36
Mosel Vitelic Corporation
DDR DRAM, 4MX16, 0.36ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOSEL-VITELIC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSSOP66,.46 | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.36 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 277 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.02 A | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for V58C365164SAT36
This table gives cross-reference parts and alternative options found for V58C365164SAT36. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C365164SAT36, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HY5DV651622TC-G7 | DDR DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | SK Hynix Inc | V58C365164SAT36 vs HY5DV651622TC-G7 |
| MT46V4M16TG-7 | DDR DRAM, 4MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 | Micron Technology Inc | V58C365164SAT36 vs MT46V4M16TG-7 |
| M13S64164A-6TIG | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | V58C365164SAT36 vs M13S64164A-6TIG |
| IS43R16400B-5TL | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, TSOP2-66 | Integrated Silicon Solution Inc | V58C365164SAT36 vs IS43R16400B-5TL |
| M13S64164A-5TG | DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Elite Semiconductor Memory Technology Inc | V58C365164SAT36 vs M13S64164A-5TG |
| V58C365164SAT4 | DDR DRAM, 4MX16, 0.4ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | Mosel Vitelic Corporation | V58C365164SAT36 vs V58C365164SAT4 |
| K4D64163HE-TC60 | DDR DRAM, 4MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | V58C365164SAT36 vs K4D64163HE-TC60 |
| HY5DV651623TC | Synchronous DRAM, 4MX16, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | SK Hynix Inc | V58C365164SAT36 vs HY5DV651623TC |
| HY51V16160BLTC-80 | EDO DRAM, 1MX16, 80ns, CMOS, 0.400 INCH, TSOP2 | SK Hynix Inc | V58C365164SAT36 vs HY51V16160BLTC-80 |
| V58C365164SAT-6L | DDR DRAM, 4MX16, 0.1ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | Mosel Vitelic Corporation | V58C365164SAT36 vs V58C365164SAT-6L |