Datasheets
V58C2128164SXT6 by: Mosel Vitelic Corporation

DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66

Part Details for V58C2128164SXT6 by Mosel Vitelic Corporation

Overview of V58C2128164SXT6 by Mosel Vitelic Corporation

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for V58C2128164SXT6

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V58C2128164SXT6 Part Data Attributes

V58C2128164SXT6 Mosel Vitelic Corporation
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V58C2128164SXT6 Mosel Vitelic Corporation DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, TSOP2-66
Part Life Cycle Code Obsolete
Ihs Manufacturer MOSEL-VITELIC
Part Package Code TSOP2
Package Description TSOP2,
Pin Count 66
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G66
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for V58C2128164SXT6

This table gives cross-reference parts and alternative options found for V58C2128164SXT6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C2128164SXT6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4H281638E-TLB30 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor V58C2128164SXT6 vs K4H281638E-TLB30
K4D261638E-TC500 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor V58C2128164SXT6 vs K4D261638E-TC500
HYB25DC128160CE-6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG V58C2128164SXT6 vs HYB25DC128160CE-6
HYB25D128160CE-6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Infineon Technologies AG V58C2128164SXT6 vs HYB25D128160CE-6
MT46V8M16TG-6TES:D DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SXT6 vs MT46V8M16TG-6TES:D
K4H281638E-TCB30 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor V58C2128164SXT6 vs K4H281638E-TCB30
MT46V8M16TG-5B:A DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SXT6 vs MT46V8M16TG-5B:A
HYB25D128160AE-6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG V58C2128164SXT6 vs HYB25D128160AE-6
W9412G6IH-6I DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66 Winbond Electronics Corp V58C2128164SXT6 vs W9412G6IH-6I
N2DS12Q16BS-6K DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66 Nanya Technology Corporation V58C2128164SXT6 vs N2DS12Q16BS-6K
Part Number Description Manufacturer Compare
N2DS12Q16BS-75B DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, GREEN, PLASTIC, TSOP2-66 Nanya Technology Corporation V58C2128164SXT6 vs N2DS12Q16BS-75B
HY5DU281622ALT-K DDR DRAM, 8MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SXT6 vs HY5DU281622ALT-K
EDD1216AJTA-5B-E DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66 Elpida Memory Inc V58C2128164SXT6 vs EDD1216AJTA-5B-E
HY5DU281622ET-28 DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SXT6 vs HY5DU281622ET-28
HY5DV1291622CLTC-75 DDR DRAM, 8MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SXT6 vs HY5DV1291622CLTC-75
K4D261638E-TC360 DDR DRAM, 8MX16, 0.6ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor V58C2128164SXT6 vs K4D261638E-TC360
HY5DV281622AT-5 DDR DRAM, 8MX16, 1ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc V58C2128164SXT6 vs HY5DV281622AT-5
VG37128162AT-6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Vanguard International Semiconductor Corporation V58C2128164SXT6 vs VG37128162AT-6
HYB25D128160AT-6 DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG V58C2128164SXT6 vs HYB25D128160AT-6
MT46V8M16TG-5BIT:A DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc V58C2128164SXT6 vs MT46V8M16TG-5BIT:A

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