Part Details for V54C316162VAT10 by Mosel Vitelic Corporation
Overview of V54C316162VAT10 by Mosel Vitelic Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Part Details for V54C316162VAT10
V54C316162VAT10 CAD Models
V54C316162VAT10 Part Data Attributes
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V54C316162VAT10
Mosel Vitelic Corporation
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Datasheet
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V54C316162VAT10
Mosel Vitelic Corporation
Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MOSEL-VITELIC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP50,.46,32 | |
Pin Count | 50 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 8 ns | |
Clock Frequency-Max (fCLK) | 100 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G50 | |
JESD-609 Code | e0 | |
Length | 20.95 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 50 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 1MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP50,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.002 A | |
Supply Current-Max | 0.1 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for V54C316162VAT10
This table gives cross-reference parts and alternative options found for V54C316162VAT10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V54C316162VAT10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HY57V161610CLTC-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | V54C316162VAT10 vs HY57V161610CLTC-10 |
UPD4516161AG5-A12-9NF | Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | NEC Electronics Group | V54C316162VAT10 vs UPD4516161AG5-A12-9NF |
UPD4516161AG5-A12-9NF | Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | V54C316162VAT10 vs UPD4516161AG5-A12-9NF |
UPD4516161AG5-A12L-9NF | Synchronous DRAM, 1MX16, 8ns, MOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Elpida Memory Inc | V54C316162VAT10 vs UPD4516161AG5-A12L-9NF |
UPD4516161G5-A10-7JF | 1MX16 SYNCHRONOUS DRAM, 8ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | Renesas Electronics Corporation | V54C316162VAT10 vs UPD4516161G5-A10-7JF |
M5M4V16S40CTP-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 | Mitsubishi Electric | V54C316162VAT10 vs M5M4V16S40CTP-10 |
IBM0316169CT3-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | IBM | V54C316162VAT10 vs IBM0316169CT3-10 |
HY57V161610BTC-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | V54C316162VAT10 vs HY57V161610BTC-10 |
HY57V161610BLTC-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | V54C316162VAT10 vs HY57V161610BLTC-10 |
HY57V161610CTC-10 | Synchronous DRAM, 1MX16, 8ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 | SK Hynix Inc | V54C316162VAT10 vs HY57V161610CTC-10 |