Part Details for V436516R04VATG-75 by Mosel Vitelic Corporation
Overview of V436516R04VATG-75 by Mosel Vitelic Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for V436516R04VATG-75
V436516R04VATG-75 CAD Models
V436516R04VATG-75 Part Data Attributes
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V436516R04VATG-75
Mosel Vitelic Corporation
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V436516R04VATG-75
Mosel Vitelic Corporation
Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOSEL-VITELIC | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM168 | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 133 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-N168 | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 16777216 words | |
| Number of Words Code | 16000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 16MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM168 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.008 A | |
| Supply Current-Max | 1 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for V436516R04VATG-75
This table gives cross-reference parts and alternative options found for V436516R04VATG-75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V436516R04VATG-75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M364C1600CT0-C60 | Fast Page DRAM Module, 16MX64, 60ns, CMOS, DIMM-168 | Samsung Semiconductor | V436516R04VATG-75 vs M364C1600CT0-C60 |
| HYM5V641634TFG-50 | EDO DRAM Module, 16MX64, 50ns, CMOS, PDMA168, DIMM-168 | SK Hynix Inc | V436516R04VATG-75 vs HYM5V641634TFG-50 |
| HYM5V641634KG-50 | EDO DRAM Module, 16MX64, 50ns, CMOS, PDMA168, DIMM-168 | SK Hynix Inc | V436516R04VATG-75 vs HYM5V641634KG-50 |
| M366S1654CTS-L7C | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168 | Samsung Semiconductor | V436516R04VATG-75 vs M366S1654CTS-L7C |
| HYM71V16635HCLT6-H | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, DIMM-168 | SK Hynix Inc | V436516R04VATG-75 vs HYM71V16635HCLT6-H |
| WED3DG6419V7D2 | Synchronous DRAM Module, 16MX64, CMOS, DIMM-168 | Microsemi Corporation | V436516R04VATG-75 vs WED3DG6419V7D2 |
| M366S1654HUS-C7A | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, ROHS COMPLIANT, DIMM-168 | Samsung Semiconductor | V436516R04VATG-75 vs M366S1654HUS-C7A |
| M366S1724MT0-C1L | Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | V436516R04VATG-75 vs M366S1724MT0-C1L |
| MC-4516CD646LF-A80 | Synchronous DRAM Module, 16MX64, 6ns, MOS, DIMM-168 | NEC Electronics Group | V436516R04VATG-75 vs MC-4516CD646LF-A80 |
| IBMB3N16644HCB-260 | Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-168 | IBM | V436516R04VATG-75 vs IBMB3N16644HCB-260 |