Part Details for UPD45128163G5-A10I-9JF by Elpida Memory Inc
Overview of UPD45128163G5-A10I-9JF by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Part Details for UPD45128163G5-A10I-9JF
UPD45128163G5-A10I-9JF CAD Models
UPD45128163G5-A10I-9JF Part Data Attributes:
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UPD45128163G5-A10I-9JF
Elpida Memory Inc
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Datasheet
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UPD45128163G5-A10I-9JF
Elpida Memory Inc
Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 100 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| JESD-609 Code | e0 | |
| Length | 22.22 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.001 A | |
| Supply Current-Max | 0.23 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | MOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for UPD45128163G5-A10I-9JF
This table gives cross-reference parts and alternative options found for UPD45128163G5-A10I-9JF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD45128163G5-A10I-9JF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KM416S8030BT-F8 | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | UPD45128163G5-A10I-9JF vs KM416S8030BT-F8 |
| DPSD8MX16RKY5-DP-XXP12 | Synchronous DRAM, 8MX16, CMOS, PDSO54, STACK, LEADLESS, MODULE, TSOP-54 | B&B Electronics Manufacturing Company | UPD45128163G5-A10I-9JF vs DPSD8MX16RKY5-DP-XXP12 |
| MT48V8M16TG-8XT | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | UPD45128163G5-A10I-9JF vs MT48V8M16TG-8XT |
| V55C2128164VAT7 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | UPD45128163G5-A10I-9JF vs V55C2128164VAT7 |
| IS42S16800B-6T | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | Integrated Silicon Solution Inc | UPD45128163G5-A10I-9JF vs IS42S16800B-6T |
| K4S281632D-TP7C | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | UPD45128163G5-A10I-9JF vs K4S281632D-TP7C |
| MT48LC32M4A2P-6AL:G | Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 | Micron Technology Inc | UPD45128163G5-A10I-9JF vs MT48LC32M4A2P-6AL:G |
| V54C3128404VCLI75HPC | Synchronous DRAM, 32MX4, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 | ProMOS Technologies Inc | UPD45128163G5-A10I-9JF vs V54C3128404VCLI75HPC |
| HY57W2A1620HCT-S | Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | SK Hynix Inc | UPD45128163G5-A10I-9JF vs HY57W2A1620HCT-S |
| HYB39SC128169EE-7 | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, GREEN, PLASTIC, TSOP2-54 | Qimonda AG | UPD45128163G5-A10I-9JF vs HYB39SC128169EE-7 |