Datasheets
UPD45128163G5-A10-9JF by:

Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54

Part Details for UPD45128163G5-A10-9JF by Elpida Memory Inc

Overview of UPD45128163G5-A10-9JF by Elpida Memory Inc

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Applications Industrial Automation

Part Details for UPD45128163G5-A10-9JF

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UPD45128163G5-A10-9JF Part Data Attributes:

UPD45128163G5-A10-9JF Elpida Memory Inc
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UPD45128163G5-A10-9JF Elpida Memory Inc Synchronous DRAM, 8MX16, 6ns, MOS, PDSO54, PLASTIC, TSOP2-54
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e0
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001 A
Supply Current-Max 0.23 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology MOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for UPD45128163G5-A10-9JF

This table gives cross-reference parts and alternative options found for UPD45128163G5-A10-9JF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD45128163G5-A10-9JF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY57V281620BT-S Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 SK Hynix Inc UPD45128163G5-A10-9JF vs HY57V281620BT-S
GM72V281641AT-7J Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, LG Semicon Co Ltd UPD45128163G5-A10-9JF vs GM72V281641AT-7J
HY57V281620HCT-S Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc UPD45128163G5-A10-9JF vs HY57V281620HCT-S
HY57V281620HCT-P Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc UPD45128163G5-A10-9JF vs HY57V281620HCT-P
HY57V281620HCTP-S Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc UPD45128163G5-A10-9JF vs HY57V281620HCTP-S
HY57V281620BT-P Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54 SK Hynix Inc UPD45128163G5-A10-9JF vs HY57V281620BT-P
HY57V281620HCTP-P Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc UPD45128163G5-A10-9JF vs HY57V281620HCTP-P
Part Number Description Manufacturer Compare
IS42S16800E-5TL Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc UPD45128163G5-A10-9JF vs IS42S16800E-5TL
HYB39S128160CT-7.5 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG UPD45128163G5-A10-9JF vs HYB39S128160CT-7.5
K4S280432A-TL80 Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD45128163G5-A10-9JF vs K4S280432A-TL80
HYB39S128160DE-7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG UPD45128163G5-A10-9JF vs HYB39S128160DE-7
HY57Y281620HCLT-P Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc UPD45128163G5-A10-9JF vs HY57Y281620HCLT-P
TC59SM704AFT-80 IC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components UPD45128163G5-A10-9JF vs TC59SM704AFT-80
IS42S16800B-75ETLI Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc UPD45128163G5-A10-9JF vs IS42S16800B-75ETLI
IS42S16800E-7TL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc UPD45128163G5-A10-9JF vs IS42S16800E-7TL
K4S281632F-UC600 Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 Samsung Semiconductor UPD45128163G5-A10-9JF vs K4S281632F-UC600
NT5SV8M16FS-6K Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54, 0.400 MM, HALOGEN FREE AND LEAD FREE, PLASTIC, TSSOP2-54 Nanya Technology Corporation UPD45128163G5-A10-9JF vs NT5SV8M16FS-6K

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