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Transistors RF Small Signal Bipolar Transistors UPA811T-T1-A

UPA811T-T1-A
Description: RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6

Overview of UPA811T-T1-A by NEC Compound Semiconductor Devices Ltd

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Available Datasheets

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CAD Models for UPA811T-T1-A by NEC Compound Semiconductor Devices Ltd
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Part Data Attributes for UPA811T-T1-A by NEC Compound Semiconductor Devices Ltd
Parametric Data

UPA811T-T1-A
NEC Compound Semiconductor Devices Ltd
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
Package Description
PLASTIC, SO-6
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
LOW NOISE
Collector Current-Max (IC)
0.035 A
Collector-Base Capacitance-Max
0.7 pF
Collector-Emitter Voltage-Max
10 V
Configuration
SEPARATE, 2 ELEMENTS
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e6
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN BISMUTH
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
8000 MHz
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  1. UPA811T-T1-A
    NEC Compound Semiconductor Devices Ltd
    RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, SO-6
    VS

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