Part Details for UPA2810T1L-E2-AY by Renesas Electronics Corporation
Overview of UPA2810T1L-E2-AY by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
UPA2810T1L-E1-AY | Renesas Electronics Corporation | Switching N-Channel Power MOSFET | |
UPA2810T1L-E2-AY | Renesas Electronics Corporation | Switching N-Channel Power MOSFET, HVSON, /Embossed Tape |
Price & Stock for UPA2810T1L-E2-AY
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
UPA2810T1L-E2-AY
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Avnet Americas | Trans MOSFET N-CH 30V 16A 8-Pin HVSON T/R - Tape and Reel (Alt: UPA2810T1L-E2-AY) RoHS: Compliant Min Qty: 332 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 75000 Partner Stock |
|
$1.1000 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 13A, 30V, P-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 54000 |
|
$0.9361 / $1.1000 | Buy Now |
Part Details for UPA2810T1L-E2-AY
UPA2810T1L-E2-AY CAD Models
UPA2810T1L-E2-AY Part Data Attributes
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UPA2810T1L-E2-AY
Renesas Electronics Corporation
Buy Now
Datasheet
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UPA2810T1L-E2-AY
Renesas Electronics Corporation
Switching N-Channel Power MOSFET, HVSON, /Embossed Tape
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | HVSON | |
Package Description | ROHS COMPLIANT PACKAGE-8 | |
Pin Count | 8 | |
Manufacturer Package Code | PVSN0008JD | |
Reach Compliance Code | unknown | |
ECCN Code | 5A002 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Avalanche Energy Rating (Eas) | 16.9 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.012 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 3.8 W | |
Pulsed Drain Current-Max (IDM) | 78 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |