Part Details for UPA2716AGR-E1-AT by Renesas Electronics Corporation
Overview of UPA2716AGR-E1-AT by Renesas Electronics Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for UPA2716AGR-E1-AT
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | UPA2716 - Power Field-Effect Transistor, 14A, 30V, P-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6963 |
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$0.8251 / $0.9707 | Buy Now |
Part Details for UPA2716AGR-E1-AT
UPA2716AGR-E1-AT CAD Models
UPA2716AGR-E1-AT Part Data Attributes:
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UPA2716AGR-E1-AT
Renesas Electronics Corporation
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Datasheet
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UPA2716AGR-E1-AT
Renesas Electronics Corporation
Switching N-Channel Power MOSFET, SOP, /Embossed Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | SOP | |
Package Description | LEAD FREE, POWER, SOP-8 | |
Pin Count | 8 | |
Manufacturer Package Code | PRSP0008DN-A8 | |
Reach Compliance Code | unknown | |
ECCN Code | 5A002 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Avalanche Energy Rating (Eas) | 19.6 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.0135 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |