Part Details for UPA1874BGR-9JG by NEC Electronics Group
Overview of UPA1874BGR-9JG by NEC Electronics Group
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- Part Data Attributes: (Available)
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Applications
Consumer Electronics
Education and Research
Industrial Automation
Electronic Manufacturing
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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UPA1874BGR-9JG-E1-A | Renesas Electronics Corporation | N-Channel Mos Field Effect Transistor For Switching, TSSOP, /Embossed Tape |
Part Details for UPA1874BGR-9JG
UPA1874BGR-9JG CAD Models
UPA1874BGR-9JG Part Data Attributes
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UPA1874BGR-9JG
NEC Electronics Group
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Datasheet
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UPA1874BGR-9JG
NEC Electronics Group
Power Field-Effect Transistor, 8A I(D), 30V, 0.0195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER TSSOP-8
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NEC ELECTRONICS CORP | |
Part Package Code | TSSOP | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.0195 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |