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TX-1N5473A by:

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 56pF C(T), 30V, Silicon, Abrupt, DO-7

Part Details for TX-1N5473A by Lockheed Martin Microwave

Overview of TX-1N5473A by Lockheed Martin Microwave

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Applications Industrial Automation Energy and Power Systems Renewable Energy Automotive

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Part Details for TX-1N5473A

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TX-1N5473A Part Data Attributes

TX-1N5473A Lockheed Martin Microwave
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TX-1N5473A Lockheed Martin Microwave Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 56pF C(T), 30V, Silicon, Abrupt, DO-7
Part Life Cycle Code Obsolete
Ihs Manufacturer LOCKHEED MARTIN MICROWAVE
Package Description O-LALF-W2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 30 V
Case Connection ISOLATED
Configuration SINGLE
Diode Cap Tolerance 10%
Diode Capacitance Ratio-Min 2.9
Diode Capacitance-Nom 56 pF
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 Code DO-7
JESD-30 Code O-LALF-W2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Power Dissipation-Max 0.4 W
Qualification Status Not Qualified
Quality Factor-Min 300
Reverse Current-Max 0.02 µA
Reverse Test Voltage 25 V
Surface Mount NO
Terminal Form WIRE
Terminal Position AXIAL
Variable Capacitance Diode Classification ABRUPT

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