Part Details for TW083N65C,S1F(S by Toshiba America Electronic Components
Overview of TW083N65C,S1F(S by Toshiba America Electronic Components
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for TW083N65C,S1F(S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50AK7224
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Newark | Sic Mosfet, N-Ch, 650V, 30A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:30A, Drain Source Voltage Vds:650V, No. Of Pins:3Pins, Rds(On) Test Voltage:18V, Power Dissipation:111W Rohs Compliant: Yes |Toshiba TW083N65C, S1F(S RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 39 |
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$6.3300 | Buy Now |
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Quest Components | 72 |
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$19.1828 / $22.5680 | Buy Now | |
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DISTI #
C1S751201789947
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Chip1Stop | MOSFET RoHS: Compliant pbFree: No | 30 |
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$17.7000 / $23.2000 | Buy Now |
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DISTI #
C1S751201420372
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Chip1Stop | SICMOS 247-3L G3 RoHS: Compliant pbFree: No Container: Tube | 24 |
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$12.4000 / $14.5000 | Buy Now |
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DISTI #
TW083N65C,S1F(S
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EBV Elektronik | Silicon Carbide MOSFET, Single, N Channel, 30 A, 650 V, 113 Milliohms, TO-247, 3 Pins (Alt: TW083N65C,S1F(S) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 23 Weeks, 0 Days | EBV - 120 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 30 | 90 |
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$11.6900 / $12.6300 | Buy Now |
Part Details for TW083N65C,S1F(S
TW083N65C,S1F(S CAD Models
TW083N65C,S1F(S Part Data Attributes
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TW083N65C,S1F(S
Toshiba America Electronic Components
Buy Now
Datasheet
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TW083N65C,S1F(S
Toshiba America Electronic Components
Power Field-Effect Transistor, 30A I(D), 650V, 0.113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.113 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 3.4 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 111 W | |
| Pulsed Drain Current-Max (IDM) | 66 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |