Datasheets
TTC014,L1NV(O by: Toshiba America Electronic Components

Small Signal Bipolar Transistor, 1A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon

Part Details for TTC014,L1NV(O by Toshiba America Electronic Components

Overview of TTC014,L1NV(O by Toshiba America Electronic Components

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Price & Stock for TTC014,L1NV(O

Part # Distributor Description Stock Price Buy
DISTI # TTC014,L1NV(O
Avnet Americas Trans GP BJT NPN 800V 1A 3-Pin New PW-Mold - Tape and Reel (Alt: TTC014,L1NV(O) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
RFQ
DISTI # 40935818
Verical Trans GP BJT NPN 800V 1A 1000mW 3-Pin(2+Tab) New PW-Mold T/R RoHS: Compliant Min Qty: 26 Package Multiple: 1 Americas - 1878
  • 26 $1.2188
  • 53 $0.5950
  • 100 $0.5450
  • 200 $0.5425
  • 500 $0.4413
  • 1,000 $0.4125
$0.4125 / $1.2188 Buy Now
DISTI # TTC014,L1NV(O
Avnet Asia Trans GP BJT NPN 800V 1A 3-Pin New PW-Mold (Alt: TTC014,L1NV(O) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days 0
RFQ
DISTI # C1S751201164333
Chip1Stop Bipolar Transistor (BJT) RoHS: Compliant Container: Cut Tape 1878
  • 5 $0.9750
  • 50 $0.4760
  • 100 $0.4360
  • 200 $0.4340
  • 500 $0.3530
  • 1,000 $0.3300
$0.3300 / $0.9750 Buy Now
DISTI # TTC014,L1NV(O
EBV Elektronik (Alt: TTC014,L1NV(O) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for TTC014,L1NV(O

TTC014,L1NV(O Part Data Attributes

TTC014,L1NV(O Toshiba America Electronic Components
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TTC014,L1NV(O Toshiba America Electronic Components Small Signal Bipolar Transistor, 1A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Toshiba
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Base Capacitance-Max 26 pF
Collector-Emitter Voltage-Max 800 V
Configuration SINGLE
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 40 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 1 V

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