-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Small Signal Bipolar Transistor, 1A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
TTC014,L1NV(O
|
Avnet Americas | Trans GP BJT NPN 800V 1A 3-Pin New PW-Mold - Tape and Reel (Alt: TTC014,L1NV(O) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0 |
|
RFQ | |
DISTI #
40935818
|
Verical | Trans GP BJT NPN 800V 1A 1000mW 3-Pin(2+Tab) New PW-Mold T/R RoHS: Compliant Min Qty: 26 Package Multiple: 1 | Americas - 1878 |
|
$0.4125 / $1.2188 | Buy Now |
DISTI #
TTC014,L1NV(O
|
Avnet Asia | Trans GP BJT NPN 800V 1A 3-Pin New PW-Mold (Alt: TTC014,L1NV(O) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days | 0 |
|
RFQ | |
DISTI #
C1S751201164333
|
Chip1Stop | Bipolar Transistor (BJT) RoHS: Compliant Container: Cut Tape | 1878 |
|
$0.3300 / $0.9750 | Buy Now |
DISTI #
TTC014,L1NV(O
|
EBV Elektronik | (Alt: TTC014,L1NV(O) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
TTC014,L1NV(O
Toshiba America Electronic Components
Buy Now
Datasheet
|
Compare Parts:
TTC014,L1NV(O
Toshiba America Electronic Components
Small Signal Bipolar Transistor, 1A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Base Capacitance-Max | 26 pF | |
Collector-Emitter Voltage-Max | 800 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 80 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 1 W | |
Power Dissipation-Max (Abs) | 40 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
VCEsat-Max | 1 V |