TSM2307CXRF
Taiwan Semiconductor
Description: Power Field-Effect Transistor, 3A I(D), 30V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

Overview of TSM2307CXRF by Taiwan Semiconductor

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  • Number of FFF Equivalents: ( 0 crosses )
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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy

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Part Data Attributes for TSM2307CXRF by Taiwan Semiconductor

TSM2307CXRF
Taiwan Semiconductor
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
Package Description
ROHS COMPLIANT PACKAGE-3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
ULTRA-LOW RESISTANCE
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
3 A
Drain-source On Resistance-Max
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
20 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. TSM2307CXRF
    Taiwan Semiconductor
    Power Field-Effect Transistor, 3A I(D), 30V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3
    VS

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