Datasheets
TSD2900 by: STMicroelectronics

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 0.380 INCH, M113, 4 PIN

Part Details for TSD2900 by STMicroelectronics

Results Overview of TSD2900 by STMicroelectronics

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

TSD2900 Information

TSD2900 by STMicroelectronics is an RF Power Field-Effect Transistor.
RF Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for TSD2900

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TSD2900 Part Data Attributes

TSD2900 STMicroelectronics
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TSD2900 STMicroelectronics UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 0.380 INCH, M113, 4 PIN
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Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description 0.380 INCH, M113, 4 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 1.25 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON