TPN12008QM,L1Q(M by: Toshiba America Electronic Components

Part Details for TPN12008QM,L1Q(M by Toshiba America Electronic Components

Overview of TPN12008QM,L1Q(M by Toshiba America Electronic Components

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Available Datasheets

Part # Manufacturer Description Datasheet
TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance

Price & Stock for TPN12008QM,L1Q(M

Part # Distributor Description Stock Price Buy
DISTI # 72AK4635
Newark Mosfet, N-Ch, 80V, 60A, Tson, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V, Qualification:-Rohs Compliant: Yes |Toshiba TPN12008QM, L1Q(M RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 6000
  • 1 $0.2980
  • 10 $0.2980
  • 25 $0.2980
  • 50 $0.2980
  • 100 $0.2980
  • 250 $0.2980
  • 500 $0.2980
  • 1,000 $0.2980
$0.2980 Buy Now
DISTI # TPN12008QM,L1Q(M
EBV Elektronik (Alt: TPN12008QM,L1Q(M) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for TPN12008QM,L1Q(M

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